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Machine translation
1. (WO2007008897) MICROWAVE-INDUCED ION CLEAVING AND PATTERNLESS TRANSFER OF SEMICONDUCTOR FILMS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2007/008897    International Application No.:    PCT/US2006/026886
Publication Date: 18.01.2007 International Filing Date: 11.07.2006
IPC:
H01L 21/762 (2006.01)
Applicants: THE ARIZONA BOARD OF REGENTS, A BODY CORPORATE ACTING ON BEHALF OF ARIZONA STATE UNIVERSITY [US/US]; 699 S. MILL AVENUE, The Brickyard, Suite 601, Room 691AA, Tempe, AZ 85281 (US) (For All Designated States Except US).
THOMPSON, Douglas, C. [US/US]; (US) (For US Only).
MAYER, James, W. [US/US]; (US) (For US Only).
NASTASI, Michael [US/US]; (US) (For US Only).
ALFORD, Terry, L. [US/US]; (US) (For US Only)
Inventors: THOMPSON, Douglas, C.; (US).
MAYER, James, W.; (US).
NASTASI, Michael; (US).
ALFORD, Terry, L.; (US)
Agent: HARPER, David, S.; MCDONNELL BOEHNEN HULBERT & BERGHOFF LLP, 300 SOUTH WACKER DRIVE, Suite 3100, Chicago, IL 60606 (US)
Priority Data:
60/698,309 12.07.2005 US
60/700,567 19.07.2005 US
Title (EN) MICROWAVE-INDUCED ION CLEAVING AND PATTERNLESS TRANSFER OF SEMICONDUCTOR FILMS
(FR) FRAGMENTATION IONIQUE INDUITE PAR DES ONDES ULTRACOURTES ET TRANSFERT SANS MOTIF DE FILMS SEMI-CONDUCTEURS
Abstract: front page image
(EN)A method of ion cleaving using microwave radiation is described. The method includes using microwave radiation to induce exfoliation of a semiconductor layer from a donor substrate. The donor substrate may be implanted, bonded to a carrier substrate, and heated via the microwave radiation. The implanted portion of the donor substrate may include increased damage and/or dipoles (relative to non- implanted portions of the donor substrate), which more readily absorb microwave radiation. Consequently, by using microwave radiation, an exfoliation time may be reduced to 12 seconds or less. In addition, a presented method also includes the use of focused ion beam implantation to achieve a pattern-less transfer of a semiconductor layer onto a carrier substrate.
(FR)La présente invention concerne un procédé de fragmentation ionique effectué au moyen d'un rayonnement d'ondes ultracourtes. Le procédé consiste à utiliser un rayonnement d'ondes ultracourtes pour induire l'exfoliation d'une couche semi-conductrice provenant d'un substrat donneur. Le substrat donneur peut être implanté, lié à un substrat porteur et chauffé au moyen du rayonnement d'ondes ultracourtes. La partie implantée du substrat donneur peut comprendre des parties à détérioration accrue et/ou des dipôles (liés aux parties non implantées du substrat donneur) qui absorbent plus facilement le rayonnement des ondes ultracourtes. On peut ainsi réduire, à l'aide du rayonnement des ondes ultracourtes, le temps d'exfoliation à 12 secondes ou moins. De plus, un procédé selon l'invention consiste également à utiliser une implantation par faisceau d'ions focalisé pour assurer un transfert sans motif d'une couche semi-conductrice sur un substrat porteur. .
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)