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Machine translation
1. (WO2007008726) USE OF SURFACTANTS TO CONTROL UNINTENTIONAL DOPANT IN SEMICONDUCTORS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2007/008726    International Application No.:    PCT/US2006/026623
Publication Date: 18.01.2007 International Filing Date: 07.07.2006
IPC:
C23C 16/44 (2006.01), C23C 16/00 (2006.01), C30B 25/02 (2006.01)
Applicants: UNIVERSITY OF UTAH RESEARCH FOUNDATION [US/US]; TECHNOLOGY TRANSFER OFFICE, 615 ARAPEEN DRIVE, Suite 310, Salt Lake City, UT 84108 (US) (For All Designated States Except US).
STRINGFELLOW, Gerald, B. [US/US]; (US) (For US Only).
HOWARD, Alexander, D. [US/US]; (US) (For US Only).
CHAPMAN, David, C. [US/US]; (US) (For US Only)
Inventors: STRINGFELLOW, Gerald, B.; (US).
HOWARD, Alexander, D.; (US).
CHAPMAN, David, C.; (US)
Agent: STRINGHAM, John, C.; WORKMAN NYDEGGER, 1000 EAGLE GATE TOWER, 60 East South Temple, Salt Lake City, UT 84111 (US)
Priority Data:
60/697,445 09.07.2005 US
11/428,940 06.07.2006 US
Title (EN) USE OF SURFACTANTS TO CONTROL UNINTENTIONAL DOPANT IN SEMICONDUCTORS
(FR) UTILISATION D'AGENTS DE SURFACE POUR LA REGULATION DE DOPANT NON VOULU DANS DES SEMI-CONDUCTEURS
Abstract: front page image
(EN)The use of surfactants that do not themselves act as dopants and are isoelectronic with either the group III or group V host atoms during OMVPE growth significantly reduces the incorporation of background impurities such as carbon, oxygen, sulfur and/or silicon. For example, the use of the surfactants Sb or Bi significantly reduces the incorporation of background impurities such as carbon, oxygen, sulfur and/or silicon during the OMVPE growth of UVV semiconductor materials, for example GaAs, GaInP, and GaP layers. As a result, an effective method for controlling the incorporation of impurity atoms is adding a minute amount of surfactant during OMVPE growth.
(FR)Selon l'invention, l'utilisation d'agents de surface qui n'agissent pas comme des dopants et sont isoélectroniques avec les atomes hôtes du groupe III ou du groupe V, au cours d'une croissance EPVOM, permet de diminuer considérablement l'incorporation d'impuretés de fond, telles que le carbone, l'oxygène, le soufre et/ou le silicium. Par exemple, l'utilisation des agents de surface Sb ou Bi permet de réduire énormément l'incorporation d'impuretés de fond, telles que le carbone, l'oxygène, le soufre et/ou le silicium, pendant la croissance EPVOM de matières semi-conductrices III/V, par exemple, des couches GaAs, GaInP, et GaP. Par conséquent, un procédé efficace de régulation de l'incorporation des atomes d'impureté consiste à ajouter une quantité minute d'un agent de surface, durant la croissance EPVOM.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)