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1. (WO2007008726) USE OF SURFACTANTS TO CONTROL UNINTENTIONAL DOPANT IN SEMICONDUCTORS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/008726 International Application No.: PCT/US2006/026623
Publication Date: 18.01.2007 International Filing Date: 07.07.2006
IPC:
C23C 16/44 (2006.01) ,C23C 16/00 (2006.01) ,C30B 25/02 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25
Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
02
Epitaxial-layer growth
Applicants:
UNIVERSITY OF UTAH RESEARCH FOUNDATION [US/US]; TECHNOLOGY TRANSFER OFFICE 615 ARAPEEN DRIVE Suite 310 Salt Lake City, UT 84108, US (AllExceptUS)
STRINGFELLOW, Gerald, B. [US/US]; US (UsOnly)
HOWARD, Alexander, D. [US/US]; US (UsOnly)
CHAPMAN, David, C. [US/US]; US (UsOnly)
Inventors:
STRINGFELLOW, Gerald, B.; US
HOWARD, Alexander, D.; US
CHAPMAN, David, C.; US
Agent:
STRINGHAM, John, C. ; WORKMAN NYDEGGER 1000 EAGLE GATE TOWER 60 East South Temple Salt Lake City, UT 84111, US
Priority Data:
11/428,94006.07.2006US
60/697,44509.07.2005US
Title (EN) USE OF SURFACTANTS TO CONTROL UNINTENTIONAL DOPANT IN SEMICONDUCTORS
(FR) UTILISATION D'AGENTS DE SURFACE POUR LA REGULATION DE DOPANT NON VOULU DANS DES SEMI-CONDUCTEURS
Abstract:
(EN) The use of surfactants that do not themselves act as dopants and are isoelectronic with either the group III or group V host atoms during OMVPE growth significantly reduces the incorporation of background impurities such as carbon, oxygen, sulfur and/or silicon. For example, the use of the surfactants Sb or Bi significantly reduces the incorporation of background impurities such as carbon, oxygen, sulfur and/or silicon during the OMVPE growth of UVV semiconductor materials, for example GaAs, GaInP, and GaP layers. As a result, an effective method for controlling the incorporation of impurity atoms is adding a minute amount of surfactant during OMVPE growth.
(FR) Selon l'invention, l'utilisation d'agents de surface qui n'agissent pas comme des dopants et sont isoélectroniques avec les atomes hôtes du groupe III ou du groupe V, au cours d'une croissance EPVOM, permet de diminuer considérablement l'incorporation d'impuretés de fond, telles que le carbone, l'oxygène, le soufre et/ou le silicium. Par exemple, l'utilisation des agents de surface Sb ou Bi permet de réduire énormément l'incorporation d'impuretés de fond, telles que le carbone, l'oxygène, le soufre et/ou le silicium, pendant la croissance EPVOM de matières semi-conductrices III/V, par exemple, des couches GaAs, GaInP, et GaP. Par conséquent, un procédé efficace de régulation de l'incorporation des atomes d'impureté consiste à ajouter une quantité minute d'un agent de surface, durant la croissance EPVOM.
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Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)