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1. (WO2007008477) METHOD FOR PROGRAMMING A MEMORY DEVICE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/008477 International Application No.: PCT/US2006/025875
Publication Date: 18.01.2007 International Filing Date: 30.06.2006
IPC:
G11C 16/10 (2006.01) ,H01L 29/788 (2006.01)
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
16
Erasable programmable read-only memories
02
electrically programmable
06
Auxiliary circuits, e.g. for writing into memory
10
Programming or data input circuits
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
788
with floating gate
Applicants:
SPANSION LLC [US/US]; 915 DeGuigne Drive Mail Stop 250 P.O. Box 3453 Sunnyvale, CA 94088-3453, US (AllExceptUS)
SINHA, Shankar [US/US]; US (UsOnly)
LIU, Zhizheng [CN/US]; US (UsOnly)
HE, Yi [CN/US]; US (UsOnly)
Inventors:
SINHA, Shankar; US
LIU, Zhizheng; US
HE, Yi; US
Agent:
JAIPERSHAD, Rajendra; One AMD Place Mail Stop 68 P.O. Box 3453 Sunnyvale, CA 94088-3453, US
Priority Data:
11/174,56006.07.2005US
Title (EN) METHOD FOR PROGRAMMING A MEMORY DEVICE
(FR) PROCEDE DE PROGRAMMATION D'UNE MEMOIRE
Abstract:
(EN) A method of programming a memory cell (210) in a non-volatile memory device (100) includes applying a first voltage to a control gate (1210) associated with the memory cell and applying a second voltage to a drain region (1230) associated with the memory cell. The method also includes applying a positive bias to a source region (1220) associated with the memory cell and/or applying a negative bias to a substrate region (1240) associated with the memory cell (210).
(FR) L'invention concerne un procédé de programmation d'une cellule de mémoire (210) dans une mémoire non volatile (100). Ledit procédé consiste à appliquer une première tension à une grille de commande (1210) associée à la cellule de mémoire et à appliquer une seconde tension à une région de drain (1230) associée à la cellule de mémoire. Le procédé consiste également à appliquer une polarisation positive à une région de source (1220) associée à la cellule de mémoire et/ou à appliquer une polarisation négative à une région de substrat (1240) associée à la cellule de mémoire (210).
front page image
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP1899977