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1. (WO2007008394) LASER DIODE ORIENTATION ON MIS-CUT SUBSTRATES
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P C T/ U S O IB ./r 5: H-B H-B
THE CLAIMS

1. A semiconductor device comprising:
a GaN substrate including a GaN (0001) surface off-cut from the <0001> direction

predominantly towards the <1120> direction; and

a laser diode cavity on the GaN substrate oriented parallel to the <1100> direction.

2. The semiconductor device of claim 1, further comprising a laser facet oriented on a

cleavage plane orthogonal to the <1100> direction.

3. The semiconductor device of claim 1 further comprising an off-cut surface angle from the (0001) that is in a range of from about 0.2 to about 10 degrees.

4. The semiconductor device of claim 1, wherein the surface off-cut from the <0001>

direction predominantly towards the <1120> direction has a tilt direction that is oriented to

within ±15 degrees of the <1120> direction.

5. The semiconductor device of claim 1, wherein the surface off-cut from the <0001>

direction predominantly towards the <11 20> direction has a tilt direction that is oriented to

within ±5 degrees of the <11 20> direction.

6. The semiconductor device of claim 1, wherein the laser facet is orthogonal to the laser diode cavity.

P C T /' IJ S O B / 5! N-B HB
7. A GaN substrate including a GaN (0001) surface off-cut from the <0001> direction

predominantly towards the <1120> direction and further comprising a substrate flat that

defines the cleavage plane orthogonal to the <1100> direction.

8. The semiconductor device of claim 1, comprising a Group III- V nitride laser diode.

9. The semiconductor device of claim 1, comprising a GaN laser diode.

10. The semiconductor device of claim 1, further comprising top contacts.

11. The semiconductor device of claim 1, comprising a vertical device.

12. A laser diode comprising a GaN substrate including a GaN (0001) surface off-cut from the

<0001> direction predominantly towards the <1120> direction; and

a laser diode cavity on the GaN substrate oriented parallel to the <1100> direction.

13. A microelectronic device structure including a GaN substrate including a GaN (0001)

surface off-cut from the <0001> direction predominantly towards 1he <11 20> direction; and

a facet oriented on a cleavage plane orthogonal to the <1100> direction.

14. The device of claim 13 wherein the substrate comprises a substrate flat having a flat tolerance of less than 5 degrees of azimuthal orientation.

15. The device of claim 13 wherein the substrate comprises a substrate flat having a flat tolerance of less than 1 degree of azimuthal orientation.

P 1C T/' U S O B / 5 H-B «ΨB
16. The semiconductor device of claim 1 comprising a doped epitaxial film on the laser diode cavity.

17. A semiconductor device comprising:
a GaN substrate including a GaN (0001) surface off-cut from the <0001> direction

predominantly towards the <1 100> direction:

a laser diode cavity on the GaN substrate oriented parallel to the <1 100> direction; and

a laser facet oriented on a cleavage plane parallel to the <1 100> direction.

18. The device of claim 17 further comprising a substrate flat that defines the cleavage plane

along to the <1 100> direction.

19. The device of claim 17 wherein the laser facet has a tilted orientation to the laser diode cavity.

20. A semiconductor device comprising:
a IH-V nitride substrate including a (Al,Ga,In)N (0001) surface off-cut from the <0001>

direction predominantly towards the <11 20> direction; and

a laser diode cavity on the III-V nitride substrate oriented parallel to the <1 100> direction.

21. The semiconductor device of claim 1, wherein the off-cut surface has been formed by a method including at least one of slicing and polishing steps.

22. A laser diode comprising a semiconductor device as claimed in claim 1, comprising epitaxial layers grown on said substrate by hydride vapor phase epitaxy.

P C T/ U SO B / 511MMS H-B
23. A laser diode comprising a semiconductor device as claimed in claim 1, as fabricated by a fabrication method including processing steps selected from the group consisting of patterning, etching, deposition and facet cleaving.

24. A microelectronic device oriented on a III-V nitride substrate wherein the III-V nitride substrate includes a III-V nitride (0001) surface off-cut from the <0001> direction

predominantly towards the <1120> direction.

25. The microelectronic device of claim 24, wherein the off-cut surface is characterized by an off-cut angle in a range of from 0.2 to 10 degrees providing surface lattice steps parallel to the

<1 ΪOO> direction.

26. The microelectronic device of claim 24, including a cavity formed on the off-cut

substrate surface such that the cavity direction is oriented along the <1 1OO> direction parallel to lattice surface steps of the substrate.

27. The microelectronic device of claim 26, including a cleavage plane that is orthogonal to

the <1100> direction yielding a cleaved facet that is orthogonal to the lattice surface steps of the substrate.

28. The microelectronic device of claim 24, including a substrate flat that is positioned to

define the <11 2 0> direction of the cleavage plane.

29. A microelectronic device oriented on a III-V nitride substrate, wherein the III-V nitride substrate includes a III-V nitride (0001) surface off-cut from the <0001> direction

predominantly towards the <1 1 00> direction.

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30. The microelectronic device of claim 29, wherein the off-cut surface is characterized by an off-cut angle in a range of from 0.2 to 10 degrees providing surface lattice steps parallel to the

<1120> direction.

31. The microelectronic device of claim 29, including a cavity formed on the off-cut

substrate surface such that the cavity direction is oriented along the <1100> direction orthogonal to the lattice surface steps of the substrate.

32. The microelectronic device of claim 31, including a cleavage plane that is orthogonal to

the <1 Ϊ00> direction yielding a cleaved facet that contains the c-axis vector.

33. The microelectronic device of claim 24, including a substrate flat that is positioned to

define the <1 1 00> direction of the cleavage plane.