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1. (WO2007008394) LASER DIODE ORIENTATION ON MIS-CUT SUBSTRATES
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/008394 International Application No.: PCT/US2006/024846
Publication Date: 18.01.2007 International Filing Date: 27.06.2006
Chapter 2 Demand Filed: 15.02.2007
IPC:
H01L 33/00 (2006.01) ,H01S 3/02 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
3
Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
02
Constructional details
Applicants:
CREE, INC. [US/US]; 4600 Silicon Drive Durham, NC 27703, US (AllExceptUS)
BRANDES, George, R. [US/US]; US (UsOnly)
VAUDO, Robert, P. [US/US]; US (UsOnly)
XU, Xueping [US/US]; US (UsOnly)
Inventors:
BRANDES, George, R.; US
VAUDO, Robert, P.; US
XU, Xueping; US
Agent:
HULTQUIST, Steven, J.; INTELLECTUAL PROPERTY/TECHNOLOGY LAW P.O. Box 14329 Research Triangle Park, NC 27709, US
Priority Data:
60/699,65911.07.2005US
Title (EN) LASER DIODE ORIENTATION ON MIS-CUT SUBSTRATES
(FR) ORIENTATION D'UNE DIODE LASER SUR UN SUBSTRAT DESORIENTE
Abstract:
(EN) A microelectronic assembly in which a semiconductor device structure is directionally positioned on an off-axis substrate (201). In an illustrative implementation, a laser diode is oriented on a GaN substrate (201) wherein the GaN substrate includes a GaN (0001) surface off-cut from the <0001> direction predominantly towards either the <1120> or the <11 00> family of directions. For a <11 20> off-cut substrate, a laser diode cavity (207) may be oriented along the <1 100> direction parallel to lattice surface steps (202) of the substrate (201) in order to have a cleaved laser facet that is orthogonal to the surface lattice steps. For <11 00> off-cut substrate, the laser diode cavity may be oriented along the <1 100> direction orthogonal to lattice surface steps (207) of the substrate (201) in order to provide a cleave laser facet that is aligned with the surface lattice steps.
(FR) L'invention concerne un ensemble microélectronique dans lequel une structure de dispositif à semi-conducteurs est placée dans une position adéquate sur un substrat hors-axe (201). Dans un mode de réalisation, une diode laser est orientée sur un substrat de GaN (201), ce substrat de GaN comprenant une surface (0001) de GaN désaxée à partir de la direction <0001> de façon prédominante dans la famille de directions <11-20> ou <1-100>. Pour un substrat désaxé selon <11-20>, une cavité (207) de diode laser peut être orientée le long de la direction <1-100> parallèlement aux marches superficielles (202) du réseau du substrat (201) de façon à former une facette de laser clivée qui est perpendiculaire aux marches superficielles du réseau. Pour un substrat désaxé selon <1-100>, la cavité de diode laser peut être orientée le long de la direction <1-100> perpendiculairement aux marches superficielles (207) du réseau du substrat (201) de façon à former une facette de laser clivée qui est alignée avec les marches superficielles du réseau.
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Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
JP2009500862US20080265379DE112006001847