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1. (WO2007008311) APPARATUS AND METHOD FOR NON-CONTACT ASSESSMENT OF A CONSTITUENT IN SEMICONDUCTOR WORKPIECES
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2007/008311    International Application No.:    PCT/US2006/021580
Publication Date: 18.01.2007 International Filing Date: 01.06.2006
IPC:
G01B 11/06 (2006.01), G01N 21/00 (2006.01)
Applicants: NANOMETRICS INCORPORATED [US/US]; 1550 Buckeye Drive, Milpitas, CA 95035 (US) (For All Designated States Except US).
BUCZKOWSKI, Andrzej [US/US]; (US) (For US Only).
HUMMEL, Steve [US/US]; (US) (For US Only)
Inventors: BUCZKOWSKI, Andrzej; (US).
HUMMEL, Steve; (US)
Agent: HALBERT, Michael, J.; Silicon Valley Patent Group LLP, 18805 Cox Avenue, Suite 220, Saratoga, CA 95070 (US)
Priority Data:
11/177,735 08.07.2005 US
Title (EN) APPARATUS AND METHOD FOR NON-CONTACT ASSESSMENT OF A CONSTITUENT IN SEMICONDUCTOR WORKPIECES
(FR) DISPOSITIF ET PROCEDE POUR L'EVALUATION SANS CONTACT DE COMPOSANT DE PIECE DE TRAVAIL EN SEMI-CONDUCTEUR
Abstract: front page image
(EN)Methods and apparatus for assessing a constituent in a semiconductor workpiece are disclosed herein. Several embodiments of the invention are directed toward non-contact methods and systems for determining a dose and an implant energy of a dopant or other constituent implanted in a semiconductor workpiece. For example, one embodiment of a non-contact method for assessing a constituent in a semiconductor workpiece includes irradiating a portion of the semiconductor workpiece, measuring photoluminescence from the irradiated portion of the semiconductor workpiece, and determining a physical property of a doped structure in the semiconductor workpiece based on the measured photoluminescence.
(FR)Procédés et dispositifs pour l'évaluation de composant dans une pièce de travail en semi-conducteur. Sous plusieurs variantes, on décrit des procédés sans contact et des systèmes correspondants permettant de déterminer une dose et une énergie d'implantation de dopant ou d'autre composant implanté dans cette pièce. Selon une variante, par exemple, on décrit un procédé qui consiste à irradier une partie de la pièce, à mesurer la photoluminescence de cette partie et à déterminer une propriété physique de structure dopée dans la pièce sur la base de la mesure effectuée.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)