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1. (WO2007008302) NITRIC OXIDE REOXIDATION FOR IMPROVED GATE LEAKAGE REDUCTION OF SION GATE DIELECTRICS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/008302 International Application No.: PCT/US2006/020892
Publication Date: 18.01.2007 International Filing Date: 26.05.2006
IPC:
H01L 21/28 (2006.01) ,H01L 29/51 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28
Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40
Electrodes
43
characterised by the materials of which they are formed
49
Metal-insulator semiconductor electrodes
51
Insulating materials associated therewith
Applicants:
APPLIED MATERIALS, INC. [US/US]; 3050 Bowers Avenue Santa Clara, California 95054, US (AllExceptUS)
CHUA, Thai Cheng [SG/US]; US
OLSEN, Christopher S [US/US]; US
KRAUS, Philip A [US/US]; US
AHMED, Khaled Z [EG/US]; US
CZARNIK, Cory [US/US]; US
Inventors:
CHUA, Thai Cheng; US
OLSEN, Christopher S; US
KRAUS, Philip A; US
AHMED, Khaled Z; US
CZARNIK, Cory; US
Agent:
PATTERSON, B Todd ; PATTERSON & SHERIDAN LLP 3040 Post Oak Blvd Houston, Texas 77056, US
Priority Data:
11/178,74911.07.2005US
Title (EN) NITRIC OXIDE REOXIDATION FOR IMPROVED GATE LEAKAGE REDUCTION OF SION GATE DIELECTRICS
(FR) REOXYDATION D'OXYDE NITRIQUE AFIN D'AMELIORER LA REDUCTION DE FUITES DE GRILLE DE DIELECTRIQUES DE GRILLE SION
Abstract:
(EN) A method of forming a silicon oxynitride gate dielectric. The method includes providing a structure comprising a silicon film formed on a substrate. The structure is exposed to a first plasma comprising a nitrogen source to incorporate nitrogen into the silicon film. The structure is oxidized in an atmosphere comprising nitric oxide to form a silicon oxynitride gate dielectric on the structure. The structure is then exposed to a second plasma comprising a nitrogen source.
(FR) Ce procédé de formation d'un diélectrique de grille d'oxynitrure de silicium consiste à fournir une structure comprenant un film de silicium formé sur un substrat, laquelle structure est exposée à un premier plasma contenant une source de nitrogène afin d'intégrer l'azote dans le film de silicium et oxydée dans une atmosphère contenant de l'oxyde nitrique afin d'obtenir un diélectrique de grille d'oxynitrure de silicium sur la structure. Elle est ensuite exposée à un second plasma comprenant une source d'azote.
front page image
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)