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1. (WO2007008027) METHOD FOR MANUFACTURING SEMICONDUCTOR MEMORY DEVICE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/008027 International Application No.: PCT/KR2006/002718
Publication Date: 18.01.2007 International Filing Date: 11.07.2006
IPC:
H01L 27/115 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
10
including a plurality of individual components in a repetitive configuration
105
including field-effect components
112
Read-only memory structures
115
Electrically programmable read-only memories
Applicants:
AHN, Kang-Ho [KR/KR]; KR
Inventors:
AHN, Kang-Ho; KR
Agent:
DYNE PATENT & LAW FIRM; 3rd Floor, Shinmyeong Building, 645-21 Yeoksam-dong, Gangnam-gu Seoul 135-910, KR
Priority Data:
10-2005-006236711.07.2005KR
Title (EN) METHOD FOR MANUFACTURING SEMICONDUCTOR MEMORY DEVICE
(FR) PROCEDE DE FABRICATION DE DISPOSITIF MEMOIRE A SEMI-CONDUCTEUR
Abstract:
(EN) A method is disclosed for manufacturing a semiconductor memory device by obtaining ultra- fine particles of a nanometer size from a reaction gas through irradiation of high-energy rays, corona discharge and formation of an electric field. The method includes forming a source, a drain and a channel on a surface of a substrate, placing the substrate into a chamber of a ultra-fine particle producing apparatus for producing ultra- fine particles from a reaction gas, irradiating high energy light beams into the chamber by the high energy light source, supplying the reaction gas from a reaction gas supply means to a reaction gas inlet tube, producing the ultra-fine particles by introducing the reaction gas into the chamber, applying a voltage to the reaction gas inlet tube by a power supply means, and forming a nanocrystalline layer by depositing the ultra-fine particles on the surface of the substrate.
(FR) La présente invention concerne un procédé de fabrication de dispositif mémoire à semi-conducteur par l'obtention de particules ultrafines d'une taille manométrique à partir d'un gaz de réaction via l'irradiation de rayons de haute énergie, d'une décharge corona et la formation d'un champ électrique. Ce procédé consiste à former une source, un drain et un canal sur la surface d'un substrat, à placer ces substrats dans une chambre d'un appareil de production de particules ultrafines destiné à produisirent des particules ultrafines à partir d'un gaz de réaction, à irradier des faisceaux lumineux de haute énergie dans la chambre par une source lumineuse de haute énergie, à fournir le gaz réaction en provenance d'un organe de fourniture de gaz de réaction au niveau d'un tube d'entrée de gaz réaction, à produire les particules ultrafines par introduction du gaz de réaction dans la chambre, à appliquer une tension au tube d'entrée de gaz de réaction via un organe d'alimentation électrique et, à former une couche monocristalline par dépôt des particules ultrafines sur la surface du substrat.
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Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: Korean (KO)