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1. (WO2007007980) LIGHT EMITTING DIODE DEVICE COMPRISING A DIFFUSION BARRIER LAYER AND METHOD FOR PREPARATION THEREOF
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Claims

1. A light emitting diode device in which (a) a substrate; (b) a binder layer; (c) an ohmic contact metal layer; and (d) a light emitting diode section are stacked in sequence, wherein the light emitting diode device has an electrically conductive layer for preventing components of the binder layer from diffusing into the ohmic contact metal layer, and being formed between the ohmic contact metal layer and the binder layer.

2. The light emitting diode device as claimed in claim 1, wherein the electrically conductive layer prevents the components of the binder layer from diffusing into the ohmic contact metal layer during high-temperature heat treatment.

3. The light emitting diode device as claimed in claim 2, wherein the temperature of the high-temperature heat treatment is in a range of 600 °C to 800 °C .

4. The light emitting diode device as claimed in claim 1, wherein the electrically conductive layer is made of a material having a defect of 1 or less per unit area of the electrically conductive layer

5. The light emitting diode device as claimed in claim 1, wherein the electrically conductive layer is made of a material having higher density than that of the binder

6. The light emitting diode device as claimed in claim 1, wherein the electrically conductive layer is made of a material having recrystallization temperature different from those of the binder layer components.

7. The light emitting diode device as claimed in claim 1, wherein the electrically conductive layer is made of a ductile material.

8. The light emitting diode device as claimed in claim 1, wherein the electrically conductive layer is made of at least one kind of metal or ceramic selected from the group consisting of Ni, Ti, Ru, Ta, W, Zr and Mo.

9. The light emitting diode device as claimed in claim 1, wherein the thickness of the electrically conductive layer is 50 A or more.

10. The light emitting diode device as claimed in claim 1, wherein the binder layer is made of gold or gold-containing alloy.

11. The light emitting diode device as claimed in claim 1, wherein the light emitting diode section is fabricated by means of a Laser Lift-Off (LLO) method.

12. A light emitting unit including the light emitting diode device as claimed in any one of claims 1 to 11.

13. A method for fabricating a light emitting diode device, the method comprising the steps of:
(a) depositing an ohmic contact metal layer on one surface of a light emitting diode section;
(b) forming a diffusion barrier layer on the ohmic contact metal layer by using an electrically conductive material having higher density than that of a binder;

(c) forming a binder layer on the electrically conductive diffusion barrier layer by using the binder; and
(d) bonding the binder layer surface of the light emitting diode section onto a substrate.

14. The method as claimed in claim 13, wherein the electrically conductive diffusion barrier layer is made of at least one kind of ceramic or metal selected from the group consisting of NI, Ti, Ru, Ta, W, Zr and Mo.

15. The method as claimed in claim 13, wherein in step (d) , the binder layer surface of the light emitting diode section is bonded onto an electrically conductive pad section located on the substrate.

16. The method as claimed in claim 13, wherein the bonding in step (d) is performed by heating and pressing at a temperature of 250 °C to 500 °C and a pressure of 1 Mpa to 100 Mpa .

17. The method as claimed in claim 13, comprising the steps of:
(a) depositing a p-type ohmic contact metal layer on a p-type layer of a light emitting diode section grown onto a first substrate;
(b) forming a diffusion barrier layer on the p-type ohmic contact metal layer by using electrically conductive material having higher density than that of a binder;
(c) forming a binder layer on the electrically conductive diffusion barrier layer by using the binder;
(d) bonding the binder layer surface of the light emitting diode section onto a second substrate;

(e) irradiating laser toward the light emitting diode section to remove the first substrate; and
(f) depositing an n-type ohmic contact metal layer on an n-type layer of the light emitting diode section, which is exposed as the first substrate is removed, and then carrying out heat treatment.