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1. WO2007007881 - CONVERSION APPARATUS, RADIATION DETECTING APPARATUS, AND RADIATION DETECTING SYSTEM

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CLAIMS
1. A conversion apparatus, comprising:
an> insulating substrate;
â– a pixel region including
a switching element region in which a plurality of switching elements each including a first metal layer disposed over the insulating substrate, an insulating layer disposed over the metal layer, a first semiconductor layer, and a second metal layer are arranged in row and column directions,
a conversion element region in which a
plurality of conversion elements each including a lower electrode made of a third metal layer disposed over the switching element region, a second
semiconductor layer disposed over the lower electrode, and an upper electrode made of a fourth metal layer disposed over the second semiconductor layer are arranged in row and column directions, and
each pixels including the switching elements and the conversion elements;
a plurality of signal wirings including the second metal layer, signal wirings being connected to the plurality of switching elements of the column direction; .
a plurality of bias wirings including the
fourth -metal layer, bias wirings being connected to the plurality of conversion elements;

an external signal wiring portion including the fourth metal layer outside the pixel region, the external signal wiring portion being connected to the signal wirings; and
a external bias wiring portion including the first metal layer outside the pixel region, the external bias wiring portion being connected to the plurality of bias wirings,
wherein the external signal wiring and the external bias wiring intersect each other.
2. A conversion apparatus according to claim 1, wherein the switching element includes a gate
electrode including the first metal layer disposed over the insulating substrate, the insulating layer disposed over the gate electrode, the first
semiconductor layer disposed over the insulating layer, and a source or drain electrode including the second metal layer disposed over the first
semiconductor layer.
3. A conversion apparatus according to claim 1, wherein the bias wiring is connected to the plurality of conversion elements of the column direction, the external bias wiring portion is connected to the plurality of bias wirings arrayed in parallel in the row direction, and the external . signal wiring portion and the external bias wiring- portion intersect each . other by sandwiching at least the insulating layer.

4. A conversion apparatus according to claim 3, further comprising an interlayer insulating layer arranged between the switching element region and the conversion element region,
wherein the external signal wiring portion and the external bias wiring portion further intersect each other by sandwiching the interlayer insulating layer.
5. A conversion apparatus according to claim 1, wherein the second metal layer and the third metal layer are including identical metal layers .
6. A conversion apparatus according to claim 1, further comprising a second external bias wiring portion including the fourth metal layer outside the pixel region and connected to the external bias wiring portion.
7. A conversion apparatus according to claim 1, further comprising a plurality of drive wirings including the first metal layer and connected to the plurality of switching elements of the row direction, and a external drive wiring portion including the fourth metal layer outside the pixel region and connected to the drive wirings .
8. A.conversion apparatus according to claim 7, wherein:
the external drive wiring portion includes a first terminal;

the external signal wiring portion includes a second terminal;
the second external bias wiring portion
includes a third terminal;
a drive circuit is connected to the first terminal to drive the switching element;
a signal processing circuit is connected to the second terminal to process an electric signal
converted by the conversion element; and
a bias power source part is connected to the third terminal to apply a bias to the conversion element .
9. A conversion apparatus according to claim 1, wherein the conversion element is a photoelectric conversion element.
10. A conversion apparatus according to claim 9, wherein the photoelectric conversion element is a photoelectric conversion element further including a second insulating layer arranged between the lower electrode and the second semiconductor layer, and a second impurity semiconductor layer arranged between the second semiconductor layer and the upper
electrode.
11. A .conversion apparatus according to claim 9, wherein the photoelectric conversion element further includes a second impurity semiconductor layer arranged between the lower electrode and the second semiconductor layer, and a third impurity
semiconductor layer arranged between the second semiconductor layer and the upper electrode.
12. A conversion apparatus according 'to claim 1, wherein the first semiconductor layer and the second semiconductor layer are made of amorphous silicon.
13. A radiation detecting apparatus,
comprising :
the conversion apparatus according to claim 1;
the conversion apparatus according to any one of claims ' 1 to 11; and
a wavelength converter arranged on the
conversion element layer, for converting an incident radioactive ray into light of a wavelength region, which is sensible by the visible light conversion element.
14. A radiation detecting system, comprising:- the radiation detecting apparatus according to claim 13;
signal processing means for processing a signal from the radiation detecting apparatus;
recording means for recording a signal from the signal processing means;
display means for displaying the signal from the signal processing means;
â– transmission processing means for transmitting the signal from the signal processing means; and a radioactive ray source for generating
radioactive rays .
15. A conversion apparatus comprising:
an insulating substrate;
a pixel region including a plurality of pixels in row and column directions, each pixel including
a switching element including a first metal layer disposed over the insulating substrate, an insulating layer disposed over the first metal layer, a first semiconductor layer, and a second metal layer, and
a conversion element including a lower
electrode made of- a third metal layer disposed over the switching element, a second semiconductor layer disposed over the lower electrode, and an upper electrode made of a fourth metal. layer disposed over the second semiconductor layer;
signal wirings connected to the plurality of switching elements of the column direction; and
bias wirings connected to the plurality of conversion elements;
wherein at an intersection portion between the signal wiring and the external biasexternal bias wiring, the. signal wiring is including the fourth metal layer, and the bias wiring is including the first metal layer.