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1. (WO2007007634) ELECTRODE STRUCTURE, SEMICONDUCTOR DEVICE AND METHODS FOR MANUFACTURING THOSE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/007634 International Application No.: PCT/JP2006/313482
Publication Date: 18.01.2007 International Filing Date: 06.07.2006
IPC:
H01L 21/28 (2006.01) ,H01S 5/042 (2006.01) ,H01S 5/323 (2006.01) ,H01L 33/00 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28
Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
04
Processes or apparatus for excitation, e.g. pumping
042
Electrical excitation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
30
Structure or shape of the active region; Materials used for the active region
32
comprising PN junctions, e.g. hetero- or double- hetero-structures
323
in AIIIBV compounds, e.g. AlGaAs-laser
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Applicants:
日本電気株式会社 NEC CORPORATION [JP/JP]; 〒1088001 東京都港区芝五丁目7番1号 Tokyo 7-1, Shiba 5-chome, Minato-ku Tokyo 1088001, JP (AllExceptUS)
佐々木 達也 SASAKI, Tatsuya [JP/JP]; JP (UsOnly)
芝 和宏 SHIBA, Kazuhiro [JP/JP]; JP (UsOnly)
河本 滋 KOUMOTO, Shigeru [JP/JP]; JP (UsOnly)
角野 雅芳 SUMINO, Masayoshi [JP/JP]; JP (UsOnly)
Inventors:
佐々木 達也 SASAKI, Tatsuya; JP
芝 和宏 SHIBA, Kazuhiro; JP
河本 滋 KOUMOTO, Shigeru; JP
角野 雅芳 SUMINO, Masayoshi; JP
Agent:
速水 進治 HAYAMI, Shinji; 〒1500021 東京都渋谷区恵比寿西2-17-16 代官山TKビル1階 Tokyo Daikanyama TK Bldg. 1F, 2-17-16, Ebisu-Nishi, Shibuya-ku Tokyo 1500021, JP
Priority Data:
2005-20089408.07.2005JP
Title (EN) ELECTRODE STRUCTURE, SEMICONDUCTOR DEVICE AND METHODS FOR MANUFACTURING THOSE
(FR) STRUCTURE D’ÉLECTRODE, DISPOSITIF SEMI-CONDUCTEUR ET PROCÉDÉS DE FABRICATION DE CEUX-CI
(JA) 電極構造、半導体素子、およびそれらの製造方法
Abstract:
(EN) A first layer containing Ti as a constituent element, a second layer containing Nb as a constituent element and a third layer containing Au as a constituent element are formed on a GaN substrate (11). Then, the GaN substrate (11) and the first to third layers are heat-treated at a temperature not less than 700˚C and not more than 1300˚C. Consequently, a metal oxide of Ti is distributed from the interface between the GaN substrate (11) and an electrode (14) to the inside of the electrode (14). Further, a metal nitride of Nb is formed inside the GaN substrate (11), and the metal nitride of Nb is distributed from the inside of the electrode (14) to the inside of the GaN substrate (11).
(FR) Selon l’invention une première couche contenant du Ti comme élément constitutif, une deuxième couche contenant du Nb comme élément constitutif et une troisième couche contenant de l’Au comme élément constitutif sont formées sur un substrat GaN (11). Ensuite, le substrat GaN (11) et les trois couches sont traitées thermiquement à une température comprise entre 700°C et 1300°C inclus. Par conséquent, un oxyde de métal de Ti est distribué depuis l’interface entre le substrat GaN (11) et une électrode (14) vers l’intérieur de l’électrode (14). De plus, un nitrure de métal de Nb est formé à l’intérieur du substrat GaN (11), et le nitrure de métal de Nb est distribué depuis l’intérieur de l’électrode (14) vers l’intérieur du substrat GaN (11).
(JA)  GaN基板11上にTiを構成元素とする第一層、Nbを構成元素とする第二層、Auを構成元素とする第三層を形成する。その後、GaN基板11、第一層~第三層を700°C以上、1300°C以下する。これにより、Tiの金属酸化物がGaN基板11と電極14との界面から、電極14内部にわたって分布する。さらに、Nbの金属窒化物がGaN基板11内部に形成される。Nbの金属窒化物は、電極14内部からGaN基板11内部にわたって分布する。  
front page image
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
JPWO2007007634US20100200863CN101218663JP5067158