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1. (WO2007007626) EXPOSURE METHOD, EXPOSURE APPARATUS AND DEVICE MANUFACTURING METHOD
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/007626 International Application No.: PCT/JP2006/313459
Publication Date: 18.01.2007 International Filing Date: 06.07.2006
IPC:
H01L 21/027 (2006.01) ,G03F 7/20 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
027
Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20
Exposure; Apparatus therefor
Applicants:
株式会社ニコン NIKON CORPORATION [JP/JP]; 〒1008331 東京都千代田区丸の内3丁目2番3号 Tokyo 2-3, Marunouchi 3-chome, Chiyoda-ku, Tokyo 1008331, JP (AllExceptUS)
祐川 彩子 SUKEGAWA, Ayako [JP/JP]; JP (UsOnly)
中島 伸一 NAKAJIMA, Shinichi [JP/JP]; JP (UsOnly)
Inventors:
祐川 彩子 SUKEGAWA, Ayako; JP
中島 伸一 NAKAJIMA, Shinichi; JP
Agent:
立石 篤司 TATEISHI, Atsuji; 〒2060035 東京都多摩市唐木田一丁目53番地9 唐木田センタービル 立石国際特許事務所 Tokyo TATEISHI & CO., Karakida Center Bldg., 1-53-9, Karakida, Tama-shi, Tokyo 2060035, JP
Priority Data:
2005-20036508.07.2005JP
Title (EN) EXPOSURE METHOD, EXPOSURE APPARATUS AND DEVICE MANUFACTURING METHOD
(FR) MÉTHODE D’EXPOSITION, APPAREIL D’EXPOSITION ET MÉTHODE DE FABRICATION DE DISPOSITIF
(JA) 露光方法及び露光装置、並びにデバイス製造方法
Abstract:
(EN) In scanning exposure, while performing synchronous scanning to a reticle and a wafer, under prescribed exposure conditions, to an illuminating area (IAR) whereupon illuminating light is applied and an exposure area, respectively, a pattern in a pattern area (PA) on the reticle is transferred on the wafer (W) through a projection optical system. At the time of correcting relative positions of the reticle and the wafer during the scanning exposure, nonparametric information relating to relative position shift quantities of the reticle and the wafer within an XY plane during the synchronous scanning, namely, a correction map including a relative position shift correcting quantity at each sample position in the scanning direction in the synchronous scanning, is used.
(FR) Dans une exposition à balayage, tout en réalisant le balayage synchrone d’un réticule et d’une galette dans des conditions d’exposition prescrites dans une zone d’illumination (IAR) à laquelle de la lumière d’exposition est appliquée et une zone d’exposition, respectivement, un motif dans une zone de motif (PA) du réticule est transféré sur la galette (W) par un système optique de projection. Au moment de la correction des positions relatives du réticule et de la galette pendant l’exposition de balayage, une information non paramétrique en relation avec les quantités de décalage de position relative du réticule et de la galette dans un plan XY pendant le balayage synchrone, en l’occurrence une carte de correction incluant une quantité de correction de décalage en position relative dans la direction de balayage du balayage synchrone, est utilisée.
(JA)  照明光が照射される照明領域(IAR)及び露光領域に対してそれぞれレチクル及びウエハを所定の露光条件の下で同期走査させつつ、レチクル上のパターン領域(PA)のパターンを投影光学系を介してウエハ(W)上に転写する走査露光中に、レチクルとウエハとの相対位置を補正する際には、同期走査中におけるレチクルとウエハとのXY面内の相対位置ずれ量に関するノンパラメトリックな情報、すなわち同期走査の走査方向に関する各サンプル位置での相対位置ずれの補正量を含む補正マップを用いる。
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Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)