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1. (WO2007007561) COMPOSITION FOR FORMATION OF PARAELECTRIC THIN-FILM, PARAELECTRIC THIN-FILM AND DIELECTRIC MEMORY
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/007561 International Application No.: PCT/JP2006/313029
Publication Date: 18.01.2007 International Filing Date: 29.06.2006
IPC:
H01L 21/8242 (2006.01) ,H01L 21/316 (2006.01) ,H01L 27/108 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78
with subsequent division of the substrate into plural individual devices
82
to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822
the substrate being a semiconductor, using silicon technology
8232
Field-effect technology
8234
MIS technology
8239
Memory structures
8242
Dynamic random access memory structures (DRAM)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
314
Inorganic layers
316
composed of oxides or glassy oxides or oxide-based glass
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
10
including a plurality of individual components in a repetitive configuration
105
including field-effect components
108
Dynamic random access memory structures
Applicants:
東京応化工業株式会社 TOKYO OHKA KOGYO CO., LTD. [JP/JP]; 〒2110012 神奈川県川崎市中原区中丸子150番地 Kanagawa 150, Nakamaruko, Nakahara-ku, Kawasaki-shi, Kanagawa 2110012, JP (AllExceptUS)
竹内 義行 TAKEUCHI, Yoshiyuki [JP/JP]; JP (UsOnly)
Inventors:
竹内 義行 TAKEUCHI, Yoshiyuki; JP
Agent:
正林 真之 SHOBAYASHI, Masayuki; 〒1700013 東京都豊島区東池袋1丁目25番8号 タカセビル本館 Tokyo Takase Bldg., 25-8, Higashi-ikebukuro 1-chome Toshima-ku, Tokyo 1700013, JP
Priority Data:
2005-20216711.07.2005JP
Title (EN) COMPOSITION FOR FORMATION OF PARAELECTRIC THIN-FILM, PARAELECTRIC THIN-FILM AND DIELECTRIC MEMORY
(FR) COMPOSITION POUR FABRICATION D'UN FILM MINCE PARELECTRIQUE, FILM MINCE PARAELECTRIQUE ET MEMOIRE DIELECTRIQUE
(JA) 常誘電体薄膜形成用組成物、常誘電体薄膜および誘電体メモリ
Abstract:
(EN) A composition for formation of paraelectric thin-film that can provide a paraelectric thin-film exhibiting paraelectricity and being low in leak current and high in dielectric constant. A composition for formation of paraelectric thin-film containing an organometallic compound is obtained by either hydrolyzing of mixture (1) of metal alkoxides respectively containing at least two metal elements (A) selected from the group consisting of Ba, Sr, Bi, Sc, V, Y, Zr, Nb, Hf, Ta, Si, Ge and Sn and Ti element (B), or hydrolyzing of mixture (2) consisting of a composite metal alkoxide, which contains at least two metal elements selected from among at least three metal elements consisting of the above at least two metal elements (A) and Ti element (B), and a metal alkoxide containing a metal element other than the metal elements constituting the above composite metal alkoxide among the above at least three metal elements. A paraelectric thin-film is produced by forming the composition into a coating film and firing the coating film.
(FR) Cette invention concerne une composition pour fabrication d'un film mince paraélectrique présentant une paraélectricité, à faible courant de fuite et constante diélectrique élevée. Cette composition renferme un composé organo-métallique obtenu soit par hydrolyse d'un mélange d'alkoxydes métalliques contenant respectivement au moins deux éléments métalliques (A) pris dans le groupe composé de Ba, Sr, Bi, Sc, V, Y, Zr, Nb, Hf, Ta, Si, Ge et Sn et d'un élément Ti (B), ou par hydrolyse d'un mélange (2) comprenant un alkoxyde métallique composite, lequel comprend au moins deux éléments métalliques pris parmi au moins trois des éléments métalliques (A) et l'élément Ti (B) susmentionnés, et un alkoxyde métallique contenant un élément métallique autre que les éléments métalliques composant l'akoxyde métallique composite susmentionné parmi au moins trois des éléments métalliques susmentionnés. On obtient le film mince paraéelctrique en enrobant la composition dans un film et en chauffant le film de d'enrobage.
(JA)  常誘電性で、リーク電流が低く、かつ誘電率が高い常誘電体薄膜を得ることのできる常誘電体薄膜形成用組成物を提供する。  Ba,Sr,Bi,Sc,V,Y,Zr,Nb,Hf,Ta,Si,Ge,Snからなる群から選ばれる少なくとも2種類の金属元素(A)およびTi元素(B)の各金属アルコキシド類の混合物(1)を加水分解するか、または、前記少なくとも2種類の金属元素(A)およびTi元素(B)の少なくとも3種類の金属元素のうちの少なくとも2種類の金属元素の複合金属アルコキシド類と、前記少なくとも3種類の金属元素のうち前記複合アルコキシド類を構成する金属元素以外の金属元素の金属アルコキシド類との混合物(2)を加水分解することにより、有機金属化合物を含有する常誘電体薄膜形成用組成物を得る。この組成物を用いて塗膜を形成し、この塗膜を焼成することにより常誘電体薄膜を形成する。
front page image
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)