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1. (WO2007007548) TRANSISTOR AND METHOD FOR OPERATING SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2007/007548    International Application No.:    PCT/JP2006/312830
Publication Date: 18.01.2007 International Filing Date: 27.06.2006
IPC:
H01L 21/338 (2006.01), H01L 29/778 (2006.01), H01L 29/812 (2006.01)
Applicants: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. [JP/JP]; 1006, Oaza Kadoma, Kadoma-shi, Osaka 5718501 (JP) (For All Designated States Except US).
UEDA, Daisuke; (For US Only).
TANAKA, Tsuyoshi; (For US Only).
UEMOTO, Yasuhiro; (For US Only).
UEDA, Tetsuzo; (For US Only).
YANAGIHARA, Manabu; (For US Only).
HIKITA, Masahiro; (For US Only).
UENO, Hiroaki; (For US Only)
Inventors: UEDA, Daisuke; .
TANAKA, Tsuyoshi; .
UEMOTO, Yasuhiro; .
UEDA, Tetsuzo; .
YANAGIHARA, Manabu; .
HIKITA, Masahiro; .
UENO, Hiroaki;
Agent: MAEDA, Hiroshi; Osaka-Marubeni Bldg. 5-7, Hommachi 2-chome Chuo-ku, Osaka-shi Osaka 5410053 (JP)
Priority Data:
2005-200127 08.07.2005 JP
Title (EN) TRANSISTOR AND METHOD FOR OPERATING SAME
(FR) TRANSISTOR ET PROCÉDÉ DE FONCTIONNEMENT CORRESPONDANT
(JA) トランジスタ及びその動作方法
Abstract: front page image
(EN)On a sapphire substrate (101), an AlN buffer layer (102), an undoped GaN layer (103), an undoped AlGaN layer (104), a p-type control layer (105) and a p-type contact layer (106) are successively formed. A transistor is provided with a gate electrode (110) which is brought into ohmic contact with the p-type contact layer (106), and a source electrode (108) and a drain electrode (109) on the undoped AlGaN layer (104). Holes are injected into a channel by applying a positive voltage to the p-type control layer (105), and a current flowing in the channel can be increased.
(FR)Selon la présente invention, sur un substrat en saphir (101), une couche tampon AlN (102), une couche non dopée GaN (103), une couche non dopée AlGaN (104), une couche de commande de type p (105) et une couche de contact de type p (106) sont formées successivement. Un transistor comprend une gâchette (110) qui est mise en contact ohmique avec la couche de contact de type p (106), ainsi qu’une électrode source (108) et une électrode drain (109) sur la couche non dopée AlGaN (104). Des trous sont injectés dans un canal par application d’une tension positive à la couche de commande de type p (105), et un courant circulant dans le canal peut être accru.
(JA) サファイア基板101上にAlNバッファ層102、アンドープGaN層103、アンドープAlGaN層104、p型コントロール層105、p型コンタクト層106がこの順に形成されている。また、トランジスタは、p型コンタクト層106にオーミック接触するゲート電極110と、アンドープAlGaN層104上に設けられたソース電極108およびドレイン電極109とを備えている。p型コントロール層105に正電圧を印加することで、チャネル内に正孔が注入され、チャネルを流れる電流を増加させることができる。
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)