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1. (WO2007007462) ELASTIC BOUNDARY WAVE DEVICE AND METHOD OF MANUFACTURING THE SAME
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/007462 International Application No.: PCT/JP2006/309328
Publication Date: 18.01.2007 International Filing Date: 09.05.2006
IPC:
H03H 9/145 (2006.01) ,H03H 3/08 (2006.01) ,H01L 41/09 (2006.01) ,H01L 41/18 (2006.01) ,H01L 41/22 (2006.01)
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
H
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9
Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
02
Details
125
Driving means, e.g. electrodes, coils
145
for networks using surface acoustic waves
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
H
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
3
Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
007
for the manufacture of electromechanical resonators or networks
08
for the manufacture of resonators or networks using surface acoustic waves
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41
Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
Piezo-electric or electrostrictive elements
09
with electrical input and mechanical output
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41
Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
16
Selection of materials
18
for piezo-electric or electrostrictive elements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41
Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
22
Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
Applicants:
株式会社村田製作所 MURATA MANUFACTURING CO., LTD. [JP/JP]; 〒6178555 京都府長岡京市東神足1丁目10番1号 Kyoto 10-1, Higashikotari 1-chome, Nagaokakyo-shi, Kyoto 6178555, JP (AllExceptUS)
神藤 始 KANDO, Hajime [JP/JP]; JP (UsOnly)
Inventors:
神藤 始 KANDO, Hajime; JP
Agent:
宮▲崎▼ 主税 MIYAZAKI, Chikara; 〒5400012 大阪府大阪市中央区谷町1丁目5番4号 大同生命ビル6階 Osaka 6F, Daido Seimei Bldg. 5-4, Tanimachi 1-chome Chuo-ku, Osaka-shi Osaka 5400012, JP
Priority Data:
2005-20560814.07.2005JP
Title (EN) ELASTIC BOUNDARY WAVE DEVICE AND METHOD OF MANUFACTURING THE SAME
(FR) DISPOSITIF À ONDES LIMITES ÉLASTIQUES ET PROCÉDÉ DE FABRICATION CORRESPONDANT
(JA) 弾性境界波装置及びその製造方法
Abstract:
(EN) An elastic boundary wave device (1) reduced in size, enabling the advancement of a reduction in height, and manufacturable at low cost. A first IDT electrode (3) is formed on the first surface (2a) of a substrate (2), and a first dielectric film (5) is formed so as to cover the first IDT electrode (3). A second IDT electrode (4) is formed on the second surface (2b) of the substrate, and a second dielectric film (6) is formed so as to cover the second IDT electrode (4). Either of the substrate and the first and second dielectric films (5) and (6) comprises piezoelectricity.
(FR) La présente invention concerne un dispositif à ondes limites élastiques (1) de taille réduite, qui favorise une diminution de la hauteur et peut être fabriqué à moindre coût. Une première électrode de transducteur interdigital (IDT) (3) est formée sur la première surface (2a) d'un substrat (2) et un premier film diélectrique (5) est disposé de manière à recouvrir la première électrode IDT (3). Une seconde électrode IDT (4) est formée sur la seconde surface (2b) du substrat et un second film diélectrique (6) est disposé de manière à recouvrir la seconde électrode IDT (4). Le substrat et le premier et le second film diélectrique (5, 6) possèdent chacun des propriétés piézoélectriques.
(JA)  小型であり、低背化を進めることができ、かつ安価に提供することができる弾性境界波装置を提供する。  基板2の第1の面2aに第1のIDT電極3が形成されており、第1のIDT電極3を覆うように第1の誘電体膜5が形成されており、第2の面2b上に第2のIDT電極4が形成されており、第2のIDT電極4を覆うように第2の誘電体膜6が形成されており、基板と第1,第2の誘電体膜5,6のうち、いずれか一方が圧電性を有する、弾性境界波装置1。
front page image
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
US20080106354