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Machine translation
1. (WO2007006984) DEVICE FOR CONTROLLING A HIGH-VOLTAGE TRANSISTOR, IN PARTICULAR A MOS TRANSISTOR OF A HIGH-VOLTAGE RADIO-FREQUENCY GENERATOR FOR THE SPARK IGNITION OF AN INTERNAL COMBUSTION ENGINE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2007/006984    International Application No.:    PCT/FR2006/050435
Publication Date: 18.01.2007 International Filing Date: 12.05.2006
IPC:
H03K 3/57 (2006.01)
Applicants: RENAULT S.A.S. [FR/FR]; 13-15 Quai Alphonse Le Gallo, F-92100 Boulogne Billancourt (FR) (For All Designated States Except US).
AGNERAY, ANDRE [FR/FR]; (FR) (For US Only).
NOUVEL, Clément [FR/FR]; (FR) (For US Only)
Inventors: AGNERAY, ANDRE; (FR).
NOUVEL, Clément; (FR)
Priority Data:
0507211 06.07.2005 FR
Title (EN) DEVICE FOR CONTROLLING A HIGH-VOLTAGE TRANSISTOR, IN PARTICULAR A MOS TRANSISTOR OF A HIGH-VOLTAGE RADIO-FREQUENCY GENERATOR FOR THE SPARK IGNITION OF AN INTERNAL COMBUSTION ENGINE
(FR) DISPOSITIF DE COMMANDE D'UN TRANSISTOR HAUTE TENSION, EN PARTICULIER UN TRANSISTOR MOS D'UN GENERATEUR HAUTE TENSION RADIO-FREQUENCE POUR L'ALLUMAGE COMMANDE D'UN MOTEUR A COMBUSTION INTERNE
Abstract: front page image
(EN)The invention relates to a control device comprising: an input terminal (IN) for receiving a logic control signal; an output terminal (OUT) for delivering an output control signal from the high-voltage MOS transistor; a first NMOS control transistor (Q6) with low internal impedance, which is connected between the earth and the output terminal and the gate of which is connected to the input terminal; and a second PMOS control transistor (Q5) which is connected between a supply terminal and the output terminal and the gate of which is connected to the input terminal by means of a bipolar transistor (Q2) which is mounted to a common base and which is current controlled at the emitter thereof by means of a capacitive connecting circuit (C2, R2, Q1).
(FR)Le dispositif de commande comprend une borne d'entrée (IN) pour recevoir un signal logique de commande, une borne de sortie (OUT) pour délivrer un signal de commande de sortie du transistor MOS haute tension, un premier transistor de commande NMOS (Q6) à faible impédance interne connecté entre la masse et la borne de sortie et dont la grille est reliée à ladite borne d'entrée, un deuxième transistor PMOS de commande (Q5) connecté entre une borne d'alimentation et la borne de sortie et dont la grille est connectée à ladite borne d'entrée par l'intermédiaire d'un transistor bipolaire (Q2) agencé en montage base commune et commandé en courant sur son émetteur par un circuit de liaison capacitif (C2, R2, Ql ).
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: French (FR)
Filing Language: French (FR)