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1. (WO2007006502) POWER DEVICE HAVING MONOLITHIC CASCODE STRUCTURE AND INTEGRATED ZENER DIODE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2007/006502    International Application No.:    PCT/EP2006/006670
Publication Date: 18.01.2007 International Filing Date: 07.07.2006
Chapter 2 Demand Filed:    08.05.2007    
IPC:
H01L 29/78 (2006.01), H01L 27/07 (2006.01)
Applicants: STMICROELECTRONICS S.R.L. [IT/IT]; Via C. Olivetti, 2, I-20041 Agrate Brianza (IT) (For All Designated States Except US).
RONSISVALLE, Cesare [IT/IT]; (IT) (For US Only).
ENEA, Vincenzo [IT/IT]; (IT) (For US Only)
Inventors: RONSISVALLE, Cesare; (IT).
ENEA, Vincenzo; (IT)
Agent: BOTTI, Mario-Vannini; Botti & Ferrari S.r.l., Via Locatelli, 5, I-20124 Milano (IT)
Priority Data:
05425492.5 08.07.2005 EP
Title (EN) POWER DEVICE HAVING MONOLITHIC CASCODE STRUCTURE AND INTEGRATED ZENER DIODE
(FR) DISPOSITIF DE PUISSANCE POSSEDANT UNE STRUCTURE CASCODE MONOLITHE ET UNE DIODE ZENER INTEGREE
Abstract: front page image
(EN)A power actuator (20) of the emitter-switched type is described, the power actuator comprising at least one high voltage bipolar transistor (2) and a low voltage DMOS transistor (3) connected in cascode configuration between a collector terminal (C) of the bipolar transistor (2) and a source terminal (S) of the DMOS transistor (3) and having respective control terminals (B, G). Advantageously according to the invention, the power actuator (20) further comprises at least a Zener diode (21), inserted between the source terminal (S) of the DMOS transistor (3) and the control terminal (B) of the bipolar transistor (2).
(FR)La présente invention se rapporte à un actionneur (20) du type commandé par émetteur, qui comprend au moins un transistor bipolaire à haute tension (2) et un transistor DMOS base tension (3), reliés selon une configuration cascode entre une borne de collecteur (C) du transistor bipolaire (2) et une borne de source (S) du transistor DMOS et possédant des bornes de commande (B, G) respectives. Avantageusement, conformément à l'invention, l'actionneur (20) comprend également au moins une diode Zener (21), introduite entre la borne de source (S) du transistor DMOS (3) et la borne de commande (B) du transistor bipolaire (2).
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)