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1. (WO2007006381) COMBINED ETCHING AND DOPING MEDIA FOR SILICON DIOXIDE LAYERS AND SUBJACENT SILICON
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/006381 International Application No.: PCT/EP2006/005628
Publication Date: 18.01.2007 International Filing Date: 13.06.2006
IPC:
C03C 15/00 (2006.01)
C CHEMISTRY; METALLURGY
03
GLASS; MINERAL OR SLAG WOOL
C
CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
15
Surface treatment of glass, not in the form of fibres or filaments, by etching
Applicants:
MERCK PATENT GMBH [DE/DE]; Frankfurter Str. 250 64293 Darmstadt, DE (AllExceptUS)
KUEBELBECK, Armin [DE/DE]; DE (UsOnly)
STOCKUM, Werner [DE/DE]; DE (UsOnly)
Inventors:
KUEBELBECK, Armin; DE
STOCKUM, Werner; DE
Common
Representative:
MERCK PATENT GMBH; Frankfurter Str. 250 64293 Darmstadt, DE
Priority Data:
10 2005 032 807.512.07.2005DE
Title (DE) KOMBINIERTE ÄTZ- UND DOTIERMEDIEN FÜR SILIZIUMDIOXIDSCHICHTEN UND DARUNTER LIEGENDES SILIZIUM
(EN) COMBINED ETCHING AND DOPING MEDIA FOR SILICON DIOXIDE LAYERS AND SUBJACENT SILICON
(FR) AGENTS DE GRAVURE ET DE DOPAGE COMBINES POUR DES COUCHES DE DIOXYDE DE SILICIUM ET LE SILICIUM SITUE EN DESSOUS
Abstract:
(DE) Die vorliegende Erfindung betrifft einerseits HF/Fluorid-freie Atz- und Dotiermedien, welche sowohl zum Atzen von Siliziumdioxidschichten als auch zum Dotieren darunter liegender Siliziumschichten geeignet sind. Andererseits betrifft die vorliegende Erfindung auch ein Verfahren, in dem diese Medien eingesetzt werden.
(EN) The invention relates to HF/fluoride-free etching and doping media which are suitable for etching silicon dioxide layers and doping subjacent silicon layers. The invention also relates to a method in which said media are used.
(FR) La présente invention concerne, d'une part, des agents de gravure et de dopage sans HF/fluorure, convenant aussi bien à la gravure de couches de dioxyde de silicium qu'au dopage de couches de silicium situées en dessous. Cette invention concerne, d'autre part, un procédé dans lequel ces agents sont utilisés.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: German (DE)
Filing Language: German (DE)
Also published as:
KR1020080027390EP1902000JP2009501436US20080210298CN101218184MYPI 20063231
IN592/KOLNP/2008