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1. (WO2007006338) ELECTROLESS NIWP ADHESION AND CAPPING LAYERS FOR TFT COPPER GATE PROCESS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/006338 International Application No.: PCT/EP2005/009175
Publication Date: 18.01.2007 International Filing Date: 13.07.2005
IPC:
C23C 18/50 (2006.01) ,C23C 18/18 (2006.01) ,C23C 18/54 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
18
Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
16
by reduction or substitution, i.e. electroless plating
48
Coating with alloys
50
with alloys based on iron, cobalt or nickel
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
18
Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
16
by reduction or substitution, i.e. electroless plating
18
Pretreatment of the material to be coated
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
18
Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
54
Contact plating, i.e. electroless electrochemical plating
Applicants:
L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE [FR/FR]; 75, Quai d'Orsay F-75007 Paris, FR (AllExceptUS)
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (ITRI) [--/--]; Bldg. 3 321, Kuang Fu Road Sec. 2 Hsinchu 300, TW (AllExceptUS)
NASU, Akinobu [JP/FR]; FR (UsOnly)
CHEN, Shyuan-Fang [--/--]; TW (UsOnly)
CHEN, I-Chung [--/--]; TW (UsOnly)
LIN, Tsu-An [--/--]; TW (UsOnly)
HSIUNG, Chiung, Sheng [--/--]; TW (UsOnly)
Inventors:
NASU, Akinobu; FR
CHEN, Shyuan-Fang; TW
CHEN, I-Chung; TW
LIN, Tsu-An; TW
HSIUNG, Chiung, Sheng; TW
Agent:
VESIN, Jacques ; L'Air Liquide S.A. Direction de la Propriété Intellectuelle 75, quai d'Orsay F-75321 Paris Cédex 07, FR
Priority Data:
Title (EN) ELECTROLESS NIWP ADHESION AND CAPPING LAYERS FOR TFT COPPER GATE PROCESS
(FR) COUCHES AUTOCATALYTIQUES NIWP D'ADHESION ET DE COIFFAGE POUR TRAITEMENT DE GRILLE DE CUIVRE TFT
Abstract:
(EN) Electroless NiWP layers are used for TFT Cu gate process. The NiWP deposition process comprises the following steps. (a) Cleaning of the base surface using for example UV light, ozone solution and/or alkaline mixture solution, (b) micro-etching of the base surface using, e.g. diluted acid, (c) catalyzation of the base surface using, e.g. SnCl2 and PdCl2 solutions. (d) conditioning of the base surface using reducing agent solution, and (e) NiWP deposition. It has been discovered that NiWP layers deposited under certain conditions could provide good adhesion to the glass substrate and to the Cu layer with a good Cu barrier capability. A NiWP layer in useful for adhesion, capping and/or barrier layers for TFT Cu gate process (e.g. for flat screen display panels).
(FR) Selon l'invention, des couches autocatalytiques NiWP sont utilisées pour un traitement de grille de Cu TFT. Le procédé de dépôt NiWP consiste à: a) nettoyer la surface de base avec, par exemple, une lumière UV, une solution d'ozone et/ou un mélange alcalin en solution; b) micrograver la surface de base avec, par exemple, de l'acide dilué; c) catalyser la surface de base avec, par exemple, des solutions de SnCl2 et de PdCl2; d) apprêter la surface de base avec une solution d'agent réducteur; et e) effectuer le dépôt NiWP. Il a été découvert que des couches NiWP déposées dans certaines conditions pouvaient présenter une bonne adhérence au substrat de verre et à la couche de Cu et offrir de bonnes propriétés barrière du Cu. Une couche NiWP peut être utilisée à des fins d'adhérence, de coiffage et/ou comme couche barrière pour un traitement de grille de Cu TFT (p. ex. pour des dalles d'écran plat).
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
KR1020080075080EP1907602JP2009501274US20090004372JP4659882CN101278074