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1. (WO2007006337) A TEMPERATURE SENSING DEVICE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/006337 International Application No.: PCT/EP2005/009174
Publication Date: 18.01.2007 International Filing Date: 13.07.2005
IPC:
H01L 29/78 (2006.01) ,H01L 27/06 (2006.01) ,H01L 21/336 (2006.01) ,H01L 21/8234 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
06
including a plurality of individual components in a non-repetitive configuration
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334
Multistep processes for the manufacture of devices of the unipolar type
335
Field-effect transistors
336
with an insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78
with subsequent division of the substrate into plural individual devices
82
to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822
the substrate being a semiconductor, using silicon technology
8232
Field-effect technology
8234
MIS technology
Applicants:
FREESCALE SEMICONDUCTOR, INC. [US/US]; 7700 West Parmer Lane Austin, Texas 78729, US (AllExceptUS)
REYNES, Jean-Michel [FR/FR]; FR (UsOnly)
DERAM, Alain, J [FR/FR]; FR (UsOnly)
MARTY, Eric [FR/FR]; FR (UsOnly)
SAUVEPLANE, Jean-Baptiste [FR/FR]; FR (UsOnly)
Inventors:
REYNES, Jean-Michel; FR
DERAM, Alain, J; FR
MARTY, Eric; FR
SAUVEPLANE, Jean-Baptiste; FR
Priority Data:
Title (EN) A TEMPERATURE SENSING DEVICE
(FR) SONDE DE TEMPERATURE
Abstract:
(EN) The present invention relates to an integrated device, comprising a semiconductor device (30) formed on a semiconductor substrate(4), a temperature sensing element (15) formed on the semiconductor substrate (4), an electrically insulating layer (16) formed over the temperature sensing element (15), and a metal layer (20) formed over the insulation layer (16) and substantially covering the semiconductor device (30) and the temperature sensing element (15). The present invention also relates to a method of forming a temperature sensing element (15) for integration with a semiconductor device (30).
(FR) La présente invention concerne un dispositif intégré, comprenant un dispositif semi-conducteur (30) formé sur un substrat semi-conducteur (4), un élément de détection de température (15) formé sur le substrat semi-conducteur (4), une couche d'isolation électrique (16) formée sur l'élément de détection de température (15), ainsi qu'une couche métallique (20) formée sur la couche d'isolation électrique (16) et couvrant sensiblement le dispositif semi-conducteur (30) et l'élément de détection de température (15). La présente invention concerne également un procédé destiné à la formation d'un élément de détection de température (15) conçu pour être intégré dans un dispositif semi-conducteur (30).
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Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)