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1. (WO2007006136) HYBRID NANOCOMPOSITE SEMICONDUCTOR MATERIAL AND METHOD OF PRODUCING INORGANIC SEMICONDUCTOR THEREFOR
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2007/006136    International Application No.:    PCT/CA2006/001112
Publication Date: 18.01.2007 International Filing Date: 11.07.2006
IPC:
H01L 51/30 (2006.01), H01L 29/12 (2006.01)
Applicants: NATIONAL RESEARCH COUNCIL OF CANADA [CA/CA]; 1200 Montreal Road, Ottawa, Ontario K1A 0R6 (CA) (For All Designated States Except US).
BENSEBAA, Farid [CA/CA]; (CA) (For US Only).
L'ECUYER, Pascal [CA/CA]; (CA) (For US Only).
DING, Jianfu [CA/CA]; (CA) (For US Only)
Inventors: BENSEBAA, Farid; (CA).
L'ECUYER, Pascal; (CA).
DING, Jianfu; (CA)
Agent: ANDERSON, J., Wayne; National Research Council of Canada, Intellectual Property Services Office, EG-12, Bldg. M-58, 1200 Montreal Road, Ottawa, Ontario K1A 0R6 (CA)
Priority Data:
60/697,532 11.07.2005 US
Title (EN) HYBRID NANOCOMPOSITE SEMICONDUCTOR MATERIAL AND METHOD OF PRODUCING INORGANIC SEMICONDUCTOR THEREFOR
(FR) MATERIAU A SEMI-CONDUCTEUR NANOCOMPOSITE HYBRIDE ET PROCEDE DE PRODUCTION D'UN SEMI-CONDUCTEUR INORGANIQUE ADAPTE
Abstract: front page image
(EN)Hybrid semiconductor materials have an inorganic semiconductor incorporated into a hole-conductive fluorene copolymer film. Nanometer-sized particles of the inorganic semiconductor may be prepared by mixing inorganic semiconductor precursors with a steric-hindering coordinating solvent and heating the mixture with microwaves to a temperature below the boiling point of the solvent.
(FR)L'invention concerne des matériaux à semi-conducteurs hybrides comprenant un semi-conducteur inorganique incorporé dans un film de copolymère de fluorène conducteur. Des particules de dimension nanométrique du semi-conducteur inorganique peuvent être obtenues par mélange de précurseurs du semi-conducteur inorganique avec un solvant de coordination de blocage stérique, et par réchauffement du mélange par micro-ondes à une température inférieure au point d'ébullition du solvant.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)