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1. (WO2007005984) LIGHT EMITTING DIODE WITH MG DOPED SUPERLATTICE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/005984 International Application No.: PCT/US2006/026240
Publication Date: 11.01.2007 International Filing Date: 05.07.2006
IPC:
H01L 33/04 (2010.01) ,H01L 33/32 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
04
with a quantum effect structure or superlattice, e.g. tunnel junction
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
26
Materials of the light emitting region
30
containing only elements of group III and group V of the periodic system
32
containing nitrogen
Applicants:
KANSAS STATE UNIVERSITY RESEARCH FOUNDATION [US/US]; Research Park Building 2005 Research Park Circle, Suite 105 Manhattan, Kansas 66502-5020, US (AllExceptUS)
NAKARMI, Mim, Lal [NP/US]; US (UsOnly)
JIANG, Hongxing [US/US]; US (UsOnly)
LIN, Jing-Yu [US/US]; US (UsOnly)
Inventors:
NAKARMI, Mim, Lal; US
JIANG, Hongxing; US
LIN, Jing-Yu; US
Agent:
FORREST, Bradley, A. ; Schwegman, Lundberg & Woessner, P.A. P. O. Box 2938 Minneapolis, Minnesota 55440, US
Priority Data:
60/696,70805.07.2005US
Title (EN) LIGHT EMITTING DIODE WITH MG DOPED SUPERLATTICE
(FR) DIODE ÉLECTROLUMINESCENTE À SUPERRÉSEAU DOPÉ AU MG
Abstract:
(EN) A light emitting device includes multiple alternating layers of Mg doped AlGaN and AlGaN of different Al content forming a superlattice. An electron blocking layer is coupled between a p cladding and contact layer and the multiple alternating layers. An n cladding and contact is coupled to the superlattice opposite the p cladding layer. In one embodiment, the superlattice operates as an additional electron blocking layer. Light is emitted when electrons and holes recombine in the superlattice. The holes may be bound to Mg impurities in the superlattice.
(FR) L'invention concerne un dispositif électroluminescent comprenant de multiples couches d'AlGaN et d'AlGaN de différentes teneur en Al, dopées au Mg, alternées, formant une superréseau. Une couche de blocage d'électrons est couplée entre une couche de métallisation et de contact et les multiples couches alternées. Une couche de métallisation et de contact de type n est couplée au superréseau opposé à la couche de métallisation de type p. dans un mode de réalisation, le superréseau fonctionne comme une couche de blocage d'électrons supplémentaire. De la lumière est émise lorsque des électrons et des trous se recombinent dans le superréseau. Les trous peuvent être liés à des impuretés de Mg dans le superréseau.
front page image
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)