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1. (WO2007005925) CLAMP FOR USE IN PROCESSING SEMICONDUCTOR WORKPIECES
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/005925 International Application No.: PCT/US2006/026118
Publication Date: 11.01.2007 International Filing Date: 30.06.2006
IPC:
H02N 13/00 (2006.01) ,H01L 21/683 (2006.01) ,H01L 21/687 (2006.01)
H ELECTRICITY
02
GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
N
ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
13
Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683
for supporting or gripping
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683
for supporting or gripping
687
using mechanical means, e.g. chucks, clamps or pinches
Applicants:
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. [US/US]; 35 Dory Road Gloucester, MA 01930, US (AllExceptUS)
Inventors:
MUKA, Richard; US
MURPHY, Paul; US
SUURONEN, David, E.; US
Agent:
HWANG, David, H.; VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES 35 Dory Road Gloucester, MA 01930, US
Priority Data:
11/263,11331.10.2005US
60/695,67330.06.2005US
Title (EN) CLAMP FOR USE IN PROCESSING SEMICONDUCTOR WORKPIECES
(FR) ELEMENT DE SERRAGE UTILE DANS LE TRAITEMENT DE PIECES A USINER SEMI-CONDUCTRICES
Abstract:
(EN) An apparatus is provided to improve clamping of a work piece to a support surface. The apparatus includes a support base, an insulator layer disposed on the support base, an electrode layer disposed on the insulator layer, and a clamping layer comprising aluminum oxynitride disposed on the electrode layer wherein the workpiece is clamped to the surface of the clamping layer. The apparatus provides a higher clamping force for the workpiece while reducing gas leakage and particle levels in addition to maintaining a declamping time suitable for high throughput processing. The apparatus may further provide a raised surface geometry or embossments on the dielectric or a dielectric comprising an outer ring a center cavity for reducing particle contamination to the backside of the workpiece. Also, a thin wall sleeve may be provided between the base and the insulator and alternating current may be applied to opposite ones of interdigitated electrode pairs to reduce particle contamination and improve the implantation uniformity.
(FR) L'invention concerne un dispositif permettant d'améliorer le serrage d'une pièce à usiner par rapport à une surface support. Le dispositif comprend une base support, une couche isolante placée sur la base support, une couche d'électrode placée sur la couche isolante et une couche de serrage, laquelle comprend un oxynitrure d'aluminium, est placée sur la couche d'électrode lorsque la pièce à usiner est fixée à la surface de la couche de serrage. Ce dispositif produit sur la pièce une force de serrage supérieure, réduit les fuites de gaz et les taux de particules et permet en outre de maintenir un temps de desserrage approprié dans le cadre d'un traitement à haut rendement. Le dispositif présente de plus une géométrie de surface surélevée ou des bossages sur le diélectrique, ou un diélectrique comprenant un anneau extérieur et une cavité centrale permettant de limiter la contamination par des particules sur l'arrière de la pièce. De plus, un manchon à paroi mince est prévu entre la base et l'isolant, et du courant alternatif est appliqué à des paires d'électrodes interdigitées opposées afin de réduire la contamination par des particules et d'améliorer l'uniformité d'implantation.
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Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)