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1. (WO2007005873) PREAMORPHIZATION TO MINIMIZE VOID INFORMATION
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/005873 International Application No.: PCT/US2006/026045
Publication Date: 11.01.2007 International Filing Date: 30.06.2006
IPC:
H01L 51/40 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05
specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
40
Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
Applicants:
SPANSION LLC [US/US]; 915 DEGUIGNE DRIVE MAIL STOP 250 P.O. Box 3453 Sunnyvale, CA 94088-3453, US (AllExceptUS)
ADEM, Ercan [GB/US]; US (UsOnly)
TIPSAS, Nicholas, H. [US/US]; US (UsOnly)
Inventors:
ADEM, Ercan; US
TIPSAS, Nicholas, H.; US
Agent:
JAIPERSHAD, Rajendra; ONE AMD PLACE MAIL STOP 68 P.O. Box 3453 Sunnyvale, CA 94088-3453, US
Priority Data:
11/173,24401.07.2005US
Title (EN) PREAMORPHIZATION TO MINIMIZE VOID INFORMATION
(FR) PREAMORPHISATION DESTINEE A REDUIRE LA FORMATION DE VIDES
Abstract:
(EN) Methods are described for eliminating void formation during the fabrication of and/or operation of memory cells/devices. The methods to eliminate voids may include formation of an opening on a semiconductor structure, formation of a diffusion barrier layer, deposition of a metal into the opening, preamorphization of the metal using preamorphization implants, and formation of a conductivity facilitating layer. The methods to eliminate voids may alternatively include formation of an opening on a semiconductor structure, formation of a diffusion barrier layer, deposition of a metal into the opening, preamorphization of the metal using a contact with a plasma, and formation of a conductivity facilitating layer.
(FR) L'invention concerne des procédés d'élimination de formation de vides au cours de la fabrication et/ou du fonctionnement de cellules/dispositifs de mémoires. Les procédés d'élimination de vides peuvent faire appel à la formation d'une ouverture sur une structure semi-conductrice, à la formation d'une couche barrière de diffusion, au dépôt d'un métal dans l'ouverture, à la préamorphisation du métal à l'aide d'implants de préamorphisation, et à la formation d'une couche facilitant la conductivité. Les procédés d'élimination de vides peuvent dans une variante faire appel à la formation d'une ouverture sur une structure semi-conductrice, à la formation d'une couche barrière de diffusion, au dépôt d'un métal dans l'ouverture, à la préamorphisation du métal à l'aide d'un contact avec un plasma et à la formation d'une couche facilitant la conductivité.
front page image
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP1900045