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1. (WO2007005872) RESITIVE MEMORY DEVICE WITH IMPROVED DATA RETENTION
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/005872 International Application No.: PCT/US2006/026044
Publication Date: 11.01.2007 International Filing Date: 30.06.2006
IPC:
G11C 13/02 (2006.01) ,H01L 27/28 (2006.01)
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
13
Digital stores characterised by the use of storage elements not covered by groups G11C11/, G11C23/, or G11C25/173
02
using elements whose operation depends upon chemical change
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28
including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
Applicants:
SPANSION LLC [US/US]; 915 DEGUIGNE DRIVE MAIL STOP 250 P.O. Box 3453 Sunnyvale, CA 94088-3453, US (AllExceptUS)
SOKOLIK, Igor [US/US]; US (UsOnly)
KINGSBOROUGH, Richard [US/US]; US (UsOnly)
GAUN, David [RU/US]; US (UsOnly)
KAZA, Swaroop [IN/US]; US (UsOnly)
SPITZER, Stuart [US/US]; US (UsOnly)
PANGRLE, Suzette, K. [US/US]; US (UsOnly)
Inventors:
SOKOLIK, Igor; US
KINGSBOROUGH, Richard; US
GAUN, David; US
KAZA, Swaroop; US
SPITZER, Stuart; US
PANGRLE, Suzette, K.; US
Agent:
JAIPERSHAD, Rajendra; ONE AMD PLACE MAIL STOP 68 P.O. Box 3453 Sunnyvale, CA 94088-3453, US
Priority Data:
11/174,86105.07.2005US
Title (EN) RESITIVE MEMORY DEVICE WITH IMPROVED DATA RETENTION
(FR) DISPOSITIF DE MEMOIRE RESISTIVE A RETENTION DES DONNEES AMELIOREE
Abstract:
(EN) The present memory device (130) includes first and second electrodes (132, 138), a passive layer (134) between the first and second electrodes (132, 138) and an active layer (136) between the first and second electrodes (132, 138), the active layer (136) being of a material containing randomly oriented pores which are interconnected to form passages through the active layer (136).
(FR) Le dispositif de mémoire (130) selon l'invention comprend des première et seconde électrodes (132, 138), une couche passive (134) entre les première et seconde électrodes (132, 138) et une couche active (136) entre les première et seconde électrodes (132, 138), la couche active (136) étant constituée d'un matériau contenant des pores orientés de manière aléatoire qui sont interconnectés afin de former des passages dans la couche active (136).
front page image
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP1911034