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1. (WO2007005871) STACKABLE MEMORY DEVICE AND ORGANIC TRANSISTOR STRUCTURE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/005871 International Application No.: PCT/US2006/026043
Publication Date: 11.01.2007 International Filing Date: 30.06.2006
IPC:
G11C 11/404 (2006.01) ,H01L 27/28 (2006.01)
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
11
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21
using electric elements
34
using semiconductor devices
40
using transistors
401
forming cells needing refreshing or charge regeneration, i.e. dynamic cells
403
with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
404
with one charge-transfer gate, e.g. MOS transistor, per cell
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28
including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
Applicants:
SPANSION LLC [US/US]; 915 DEGUIGNE DRIVE MAIL STOP 250 P.o. Box 3453 Sunnyvale, CA 94088-3453, US (AllExceptUS)
PANGRLE, Suzette, K. [US/US]; US (UsOnly)
SOKOLIK, Igor [US/US]; US (UsOnly)
KRIEGER, Juri; US (UsOnly)
Inventors:
PANGRLE, Suzette, K.; US
SOKOLIK, Igor; US
KRIEGER, Juri; US
Agent:
JAIPERSHAD, Rajendra; ONE AMD PLACE Mail Stop 68, P.o. Box 3453 Sunnyvale, CA 94088-3453, US
Priority Data:
11/174,88101.07.2005US
Title (EN) STACKABLE MEMORY DEVICE AND ORGANIC TRANSISTOR STRUCTURE
(FR) DISPOSITIF DE MEMOIRE EMPILABLE ET STRUCTURE DE TRANSISTOR ORGANIQUE
Abstract:
(EN) In the present electronic structure (60), a first electronic device (74) includes a first pair of electrodes (76, 82) and an active layer (80) between the first pair of electrodes (76, 82). An organic transistor (100) is made up of organic material (88), a source (90), a drain (92), and a gate (96), one of the first pair of electrodes (76, 82) being connected to one of the source and drain (90, 92) of the organic transistor (100), A second electronic device (110) includes a second pair of electrodes (112, 118) and an active layer (116) between the second pair of electrodes (112, 118), one of the second pair of electrodes (112, 118) being in contact with an insulating body (94) adjacent the organic transistor (100).
(FR) Dans la présente structure électronique (60), un premier dispositif électronique (74) comprend une paire d'électrodes (76, 82) et une couche active (80) entre la première paire d'électrodes (76, 82). Un transistor organique (100) est constitué d'un matériau organique (88), d'une source (90), d'un drain (92) et d'une grille (96), une électrode de la première paire d'électrodes (76, 82) étant connectée à la source ou au drain (90, 92) du transistor organique (100). Un second dispositif électronique (110) comprend une seconde paire d'électrodes (112, 118) et une couche active (116) entre la seconde paire d'électrodes (112, 118), une électrode de la seconde paire d'électrodes (112, 118) étant en contact avec un corps isolant (94) adjacent au transistor organique (100).
front page image
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)