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Machine translation
1. (WO2007005817) TRANSISTOR WITH IMPROVED TIP PROFILE AND METHOD OF MANUFACTURE THEREOF
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2007/005817    International Application No.:    PCT/US2006/025958
Publication Date: 11.01.2007 International Filing Date: 29.06.2006
IPC:
H01L 21/336 (2006.01), H01L 21/306 (2006.01), H01L 29/04 (2006.01), H01L 21/8234 (2006.01), H01L 21/8238 (2006.01)
Applicants: INTEL CORPORATION [US/US]; 2200 Mission College Boulevard, Santa Clara, CA 95052 (US) (For All Designated States Except US).
BOHR, Mark, T. [US/US]; (US) (For US Only).
KEATING, Steven, J. [US/US]; (US) (For US Only).
LETSON, Thomas, A. [US/US]; (US) (For US Only).
MURTHY, Anand, S. [US/US]; (US) (For US Only).
O'NEILL, Donald, W. [US/US]; (US) (For US Only).
RACHMADY, Willy [ID/US]; (US) (For US Only)
Inventors: BOHR, Mark, T.; (US).
KEATING, Steven, J.; (US).
LETSON, Thomas, A.; (US).
MURTHY, Anand, S.; (US).
O'NEILL, Donald, W.; (US).
RACHMADY, Willy; (US)
Agent: WEBSTER, Thomas, C.; BLAKELY, SOKOLOFF, TAYLOR & ZAFMAN LLP, 12400 Wilshire Boulevard, 7th Floor, Los Angeles, CA 90025 (US)
Priority Data:
11/173,660 30.06.2005 US
Title (EN) TRANSISTOR WITH IMPROVED TIP PROFILE AND METHOD OF MANUFACTURE THEREOF
(FR) TRANSISTOR A PROFIL DE POINTE AMELIORE ET PROCEDE DE FABRICATION DE CELUI-CI
Abstract: front page image
(EN)Embodiments are an improved transistor structure and the method of fabricating the structure. In particular, a wet etch of an embodiment forms source and drain regions with an improved tip shape to improve the performance of the transistor by improving control of short channel effects, increasing the saturation current, improving control of the metallurgical gate length, increasing carrier mobility, and decreasing contact resistance at the interface between the source and drain and the silicide.
(FR)Cette invention concerne, dans plusieurs modes de réalisation, une structure de transistor améliorée et le procédé de fabrication de cette structure. Un mode de réalisation de cette invention comprend en particulier une gravure humide qui forme des régions source et drain présentant une forme de pointe améliorée qui permet d'améliorer les performances du transistor du fait qu'elle améliore la commande d'effets de canal court, augmente le courant de saturation, améliore la commande de la longueur de grille métallurgique, augmente la mobilité du support et réduit la résistance de contact au niveau de l'interface entre la source et drain et le siliciure.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)