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Machine translation
1. (WO2007005816) LOW-TEMPERATURE CATALYZED FORMATION OF SEGMENTED NANOWIRE OF DIELECTRIC MATERIAL
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2007/005816    International Application No.:    PCT/US2006/025957
Publication Date: 11.01.2007 International Filing Date: 29.06.2006
IPC:
C30B 25/00 (2006.01), C30B 11/12 (2006.01), C30B 29/38 (2006.01), C30B 29/60 (2006.01)
Applicants: INTEL CORPORATION [US/US]; 2200 Mission College Boulevard, Santa Clara, CA 95052 (US) (For All Designated States Except US).
LU, Donghui [CN/US]; (US) (For US Only).
CHEN, Zhan [CN/US]; (US) (For US Only)
Inventors: LU, Donghui; (US).
CHEN, Zhan; (US)
Agent: WEBSTER, Thomas, C.; BLAKELY, SOKOLOFF, TAYLOR & ZAFMAN LLP, 12400 Wilshire Boulevard, 7th Floor, Los Angeles, CA 90025 (US)
Priority Data:
11/174,076 30.06.2005 US
Title (EN) LOW-TEMPERATURE CATALYZED FORMATION OF SEGMENTED NANOWIRE OF DIELECTRIC MATERIAL
(FR) FORMATION CATALYSEE A BASSE TEMPERATURE DE NANOFIL SEGMENTE DE MATERIAU DIELECTRIQUE
Abstract: front page image
(EN)The present invention discloses a method of forming a segmented nanowire including: providing a substrate; pre-cleaning the substrate; pre-treating the substrate; forming and placing a catalyst over the substrate; and forming the segmented nanowire over the catalyst with recurring pulses of plasma-enhanced chemical vapor deposition (PECVD) of a dielectric material.
(FR)La présente invention concerne un procédé de formation d'un nanofil segmenté consistant: à utiliser un substrat; à pré-nettoyer le substrat; à pré-traiter le substrat; à former et à placer un catalyseur sur le substrat; et à former le nanofil segmenté sur le catalyseur avec des impulsions périodiques de dépôt chimique en phase vapeur activé par plasma (PECVD) d'un matériau diélectrique.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)