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1. (WO2007005813) INORGANIC SEMICONDUCTIVE FILMS AND METHODS THEREFOR
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2007/005813    International Application No.:    PCT/US2006/025953
Publication Date: 11.01.2007 International Filing Date: 29.06.2006
IPC:
H01L 21/368 (2006.01), C23C 26/00 (2006.01)
Applicants: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. [US/US]; Hewlett-Packard Company, Intellectual Property Administration, 20555 S.H. 249, Houston, Texas 77070 (US) (For All Designated States Except US).
PUNSALAN, David [US/US]; (US) (For US Only).
THOMPSON, John [US/US]; (US) (For US Only)
Inventors: PUNSALAN, David; (US).
THOMPSON, John; (US)
Agent: COULMAN, Donald J.; Hewlett-Packard Company, Intellectual Property Administration, P.O. Box 272400 Mail Stop 35, Fort Collins, Colorado 80527-2400 (US)
Priority Data:
11/173,521 02.07.2005 US
Title (EN) INORGANIC SEMICONDUCTIVE FILMS AND METHODS THEREFOR
(FR) FILMS SEMI-CONDUCTEURS INORGANIQUES ET PROCEDES CORRESPONDANTS
Abstract: front page image
(EN)Inorganic semiconductive films are made by depositing a suitable precursor sustance upon a substrate (S20), irradiating the precursor substance with electromagnetic radiation to form a nascent film (S30), and heating the nascent film at a predetermined temperature to form an inorganic semiconductive film (S40).
(FR)La présente invention concerne des films semi-conducteurs inorganiques s'obtenant par dépôt d'un précurseur approprié sur un substrat (S20), exposition du précurseur à un rayonnement électromagnétique pour former un film à l'état naissant (S30), et chauffage du film à l'état naissant jusqu'à une température définie de façon à former un film semi-conducteur inorganique (S40).
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)