Search International and National Patent Collections
Some content of this application is unavailable at the moment.
If this situation persists, please contact us atFeedback&Contact
1. (WO2007005813) INORGANIC SEMICONDUCTIVE FILMS AND METHODS THEREFOR
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/005813 International Application No.: PCT/US2006/025953
Publication Date: 11.01.2007 International Filing Date: 29.06.2006
IPC:
H01L 21/368 (2006.01) ,C23C 26/00 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
34
the devices having semiconductor bodies not provided for in groups H01L21/06, H01L21/16, and H01L21/18159
36
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
368
using liquid deposition
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
26
Coating not provided for in groups C23C2/-C23C24/87
Applicants:
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. [US/US]; Hewlett-Packard Company Intellectual Property Administration 20555 S.H. 249 Houston, Texas 77070, US (AllExceptUS)
PUNSALAN, David [US/US]; US (UsOnly)
THOMPSON, John [US/US]; US (UsOnly)
Inventors:
PUNSALAN, David; US
THOMPSON, John; US
Agent:
COULMAN, Donald J. ; Hewlett-Packard Company Intellectual Property Administration P.O. Box 272400 Mail Stop 35 Fort Collins, Colorado 80527-2400, US
Priority Data:
11/173,52102.07.2005US
Title (EN) INORGANIC SEMICONDUCTIVE FILMS AND METHODS THEREFOR
(FR) FILMS SEMI-CONDUCTEURS INORGANIQUES ET PROCEDES CORRESPONDANTS
Abstract:
(EN) Inorganic semiconductive films are made by depositing a suitable precursor sustance upon a substrate (S20), irradiating the precursor substance with electromagnetic radiation to form a nascent film (S30), and heating the nascent film at a predetermined temperature to form an inorganic semiconductive film (S40).
(FR) La présente invention concerne des films semi-conducteurs inorganiques s'obtenant par dépôt d'un précurseur approprié sur un substrat (S20), exposition du précurseur à un rayonnement électromagnétique pour former un film à l'état naissant (S30), et chauffage du film à l'état naissant jusqu'à une température définie de façon à former un film semi-conducteur inorganique (S40).
front page image
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP1900016