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Machine translation
1. (WO2007005273) MEMORY CELL WITH HIGH-K ANTIFUSE FOR REVERSE BIAS PROGRAMMING
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2007/005273    International Application No.:    PCT/US2006/023936
Publication Date: 11.01.2007 International Filing Date: 19.06.2006
IPC:
G11C 17/16 (2006.01), G11C 17/14 (2006.01)
Applicants: SANDISK 3D LLC [US/US]; 140 Caspian Court, Sunnyvale, CA 94089 (US) (For All Designated States Except US).
CLEEVES, James, M. [US/US]; (US) (For US Only)
Inventors: CLEEVES, James, M.; (US)
Agent: VON WOHLD, Rick; SanDisk Corporation, 601 McCarthy Blvd., Milpitas, CA 95035 (US)
Priority Data:
11/174,240 01.07.2005 US
Title (EN) MEMORY CELL WITH HIGH-K ANTIFUSE FOR REVERSE BIAS PROGRAMMING
(FR) CELLULE DE MEMOIRE COMPORTANT UN ANTIFUSIBLE A K ELEVE POUR PROGRAMMATION A POLARISATION INVERSE
Abstract: front page image
(EN)An integrated circuit and associated method of programming are provided. Such integrated circuit includes a memory cell with a diode and an antifuse in communication with the diode. The antifuse is constructed to include a high-K dielectric material with a K greater than 3.9. Further, the memory cell is programmed utilizing a programming pulse that reverse biases the diode thereof.
(FR)L'invention concerne un circuit intégré et un procédé associé de programmation. Le circuit intégré comprend une cellule de mémoire comportant une diode, et un antifusible en communication avec la diode. L'antifusible est construit de manière à inclure une matière diélectrique à K élevé, la valeur K étant supérieure à 3,9. De plus, cette cellule de mémoire est programmée à l'aide d'une impulsion de programmation qui inverse les polarisations de la diode.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)