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Machine translation
1. (WO2007005230) METHOD FOR REMOVING MATERIAL FROM SEMICONDUCTOR WAFER AND APPARATUS FOR PERFORMING THE SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2007/005230    International Application No.:    PCT/US2006/023354
Publication Date: 11.01.2007 International Filing Date: 15.06.2006
Chapter 2 Demand Filed:    23.03.2007    
IPC:
H01L 21/00 (2006.01), H01L 21/02 (2006.01), H01L 21/64 (2006.01), H01L 21/70 (2006.01), C03B 33/00 (2006.01)
Applicants: LAM RESEARCH CORPORATION [US/US]; 4650 Cushing Parkway, Fremont, CA 94538-6470 (US) (For All Designated States Except US).
KOROLIK, Mikhail [RU/US]; (US) (For US Only).
RAVKIN, Michael [US/US]; (US) (For US Only).
DELARIOS, John [US/US]; (US) (For US Only).
REDEKER, Fritz, C. [US/US]; (US) (For US Only).
BOYD, John, M. [CA/US]; (US) (For US Only)
Inventors: KOROLIK, Mikhail; (US).
RAVKIN, Michael; (US).
DELARIOS, John; (US).
REDEKER, Fritz, C.; (US).
BOYD, John, M.; (US)
Agent: WRIGHT, Kenneth; MARTINE PENILLA & GENCARELLA, LLP, 710 Lakeway Drive, Suite 200, Sunnyvale, CA 94085 (US)
Priority Data:
11/174,080 30.06.2005 US
Title (EN) METHOD FOR REMOVING MATERIAL FROM SEMICONDUCTOR WAFER AND APPARATUS FOR PERFORMING THE SAME
(FR) PROCEDE D'ENLEVEMENT DE MATIERE SUR PLAQUETTE A SEMI-CONDUCTEURS, ET APPAREIL A CET EFFET
Abstract: front page image
(EN)A pressure is maintained within a volume within which a semiconductor wafer resides at a pressure that is sufficient to maintain a liquid state of a precursor fluid to a non-Newtonian fluid. The precursor fluid is disposed proximate to a material to be removed from the semiconductor wafer while maintaining the precursor fluid in the liquid state. The pressure is reduced in the volume within which the semiconductor wafer resides such that the precursor fluid disposed on the wafer within the volume is transformed into the non- Newtonian fluid. An expansion of the precursor fluid and movement of the precursor fluid relative to the wafer during transformation into the non-Newtonian fluid causes theresulting non-Newtonian fluid to remove the material from the semiconductor wafer.
(FR)A l'intérieur d'un volume dans lequel on place une plaquette à semi-conducteurs, on entretient une pression suffisante pour maintenir à l'état liquide un fluide précurseur d'un fluide non-newtonien. Ce précurseur est amené à proximité de la matière à enlever sur la plaquette à semi-conducteur le précurseur demeurant à l'état liquide. En y faisant baisser la pression, le fluide précurseur se transforme en fluide non-newtonien. La dilatation et le mouvement du précurseur par rapport à la plaquette pendant sa conversion en fluide non-newtonien font qu'il retire de la matière de la plaquette.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)