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Machine translation
1. (WO2007005189) SOURCE SIDE INJECTION STORAGE DEVICE AND METHOD THEREFOR
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2007/005189    International Application No.:    PCT/US2006/022277
Publication Date: 11.01.2007 International Filing Date: 08.06.2006
IPC:
H01L 21/8238 (2006.01), H01L 21/335 (2006.01), H01L 21/3205 (2006.01), H01L 21/4763 (2006.01)
Applicants: FREESCALE SEMICONDUCTOR [US/US]; 6501 William Cannon Drive West, Austin, TX 78735 (US) (For All Designated States Except US).
HONG, Cheong, M. [MY/US]; (US) (For US Only).
CHINDALORE, Gowrishankar, L. [IN/US]; (US) (For US Only)
Inventors: HONG, Cheong, M.; (US).
CHINDALORE, Gowrishankar, L.; (US)
Agent: KING, Robert, L.; 7700 W. Parmer Lane, MD:PL02, Austin, Texas 7877 (US)
Priority Data:
11/170,446 29.06.2005 US
Title (EN) SOURCE SIDE INJECTION STORAGE DEVICE AND METHOD THEREFOR
(FR) DISPOSITIF DE MEMOIRE A INJECTION PAR LE COTE SOURCE ET PROCEDE CORRESPONDANT
Abstract: front page image
(EN)A storage device (10) has a two bit cell in which the select electrode (52) is nearest the channel between two storage layers (38, 40). Individual control electrodes (20, 22) are over individual storage layers (38, 40). Adjacent cells are separated by a doped region (34) that is shared between the adjacent cells. The doped region (34) is formed by an implant in which the control gates (22, 24) of adjacent cells are used as a mask. This structure provides for reduced area while retaining the ability to perform programming by source side injection.
(FR)Un dispositif de mémoire (10) comprend une cellule à deux bits dans laquelle l'électrode de sélection (52) est la plus proche du passage situé entre deux couches mémoire (38, 40). Des électrodes de commande individuelles (20, 22) sont situées sur les couches mémoire individuelles (38, 40). Des cellules adjacentes sont séparées par une région dopée (34) qui est partagée entre les cellules adjacentes. La région dopée (34) est formée par un implant dans lequel les portes de commande (22, 24) des cellules adjacentes font office de masque. Cette structure assure une surface réduite tout en maintenant l'aptitude à effectuer la programmation par injection du côté source.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)