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1. (WO2007005145) ULTRATHIN-BODY SCHOTTKY CONTACT MOSFET
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/005145 International Application No.: PCT/US2006/020221
Publication Date: 11.01.2007 International Filing Date: 25.05.2006
Chapter 2 Demand Filed: 03.03.2007
IPC:
H01L 29/47 (2006.01) ,H01L 29/04 (2006.01) ,H01L 29/76 (2006.01) ,H01L 29/94 (2006.01) ,H01L 27/12 (2006.01) ,H01L 27/01 (2006.01) ,H01L 31/058 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40
Electrodes
43
characterised by the materials of which they are formed
47
Schottky barrier electrodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
04
characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
86
controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
92
Capacitors with potential-jump barrier or surface barrier
94
Metal-insulator-semiconductors, e.g. MOS
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12
the substrate being other than a semiconductor body, e.g. an insulating body
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
01
comprising only passive thin-film or thick-film elements formed on a common insulating substrate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04
adapted as conversion devices
042
including a panel or array of photoelectric cells, e.g. solar cells
058
including means to utilise heat energy, e.g. hybrid systems, or a supplementary source of electric energy
Applicants:
INTERNATIONAL BUSINESS MACHINES CORPORATION [US/US]; New Orchard Road Armonk, New York 10504, US (AllExceptUS)
BOYD, Diane C. [US/US]; US (UsOnly)
IEONG, Meikei [PT/US]; US (UsOnly)
KEDZIERSKI, Jakub Tadeusz [US/US]; US (UsOnly)
SHAHIDI, Ghavam G. [IR/US]; US (UsOnly)
Inventors:
BOYD, Diane C.; US
IEONG, Meikei; US
KEDZIERSKI, Jakub Tadeusz; US
SHAHIDI, Ghavam G.; US
Agent:
SAI-HALASZ, George; 303 Taber Avenue Providence, Rhode Island 02906, US
Priority Data:
11/172,71101.07.2005US
Title (EN) ULTRATHIN-BODY SCHOTTKY CONTACT MOSFET
(FR) MOSFET DE CONTACT SCHOTTKY A CORPS ULTRAMINCE
Abstract:
(EN) An ultra thin SOl MOSFET device structure and method of fabrication is presented. The device has a terminal (20) composed o suicide, which terminal is forming a Schottky contact with the channel (30). A plurality of impurities (70) are segregated on the silicide/channel interface (60), and these segregated impurities determine the resistance of the Schottky contact. Such impurity segregation is achieved by a so called silicidation induced impurity segregation process. Silicon substitutional impurities are appropriate for accomplishing such a segregation.
(FR) L'invention concerne une structure d'un dispositif MOSFET SOI ultramince et un procédé de fabrication. Le dispositif comprend une borne composée de siliciure et formant un contact Schottky muni d'un canal. Plusieurs impuretés sont séparées sur l'interface siliciure/canal, et ces impuretés déterminent la résistance du contact Schottky. Cette ségrégation des impuretés est obtenue par un processus dit de ségrégation des impuretés par siliciuration. Des impuretés de silicium de substitution sont appropriées pour effectuer cette ségrégation.
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Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)