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Machine translation
1. (WO2007005145) ULTRATHIN-BODY SCHOTTKY CONTACT MOSFET
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2007/005145    International Application No.:    PCT/US2006/020221
Publication Date: 11.01.2007 International Filing Date: 25.05.2006
Chapter 2 Demand Filed:    03.03.2007    
IPC:
H01L 29/47 (2006.01), H01L 29/04 (2006.01), H01L 29/76 (2006.01), H01L 29/94 (2006.01), H01L 27/12 (2006.01), H01L 27/01 (2006.01), H01L 31/058 (2006.01)
Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION [US/US]; New Orchard Road, Armonk, New York 10504 (US) (For All Designated States Except US).
BOYD, Diane C. [US/US]; (US) (For US Only).
IEONG, Meikei [PT/US]; (US) (For US Only).
KEDZIERSKI, Jakub Tadeusz [US/US]; (US) (For US Only).
SHAHIDI, Ghavam G. [IR/US]; (US) (For US Only)
Inventors: BOYD, Diane C.; (US).
IEONG, Meikei; (US).
KEDZIERSKI, Jakub Tadeusz; (US).
SHAHIDI, Ghavam G.; (US)
Agent: SAI-HALASZ, George; 303 Taber Avenue, Providence, Rhode Island 02906 (US)
Priority Data:
11/172,711 01.07.2005 US
Title (EN) ULTRATHIN-BODY SCHOTTKY CONTACT MOSFET
(FR) MOSFET DE CONTACT SCHOTTKY A CORPS ULTRAMINCE
Abstract: front page image
(EN)An ultra thin SOl MOSFET device structure and method of fabrication is presented. The device has a terminal (20) composed o suicide, which terminal is forming a Schottky contact with the channel (30). A plurality of impurities (70) are segregated on the silicide/channel interface (60), and these segregated impurities determine the resistance of the Schottky contact. Such impurity segregation is achieved by a so called silicidation induced impurity segregation process. Silicon substitutional impurities are appropriate for accomplishing such a segregation.
(FR)L'invention concerne une structure d'un dispositif MOSFET SOI ultramince et un procédé de fabrication. Le dispositif comprend une borne composée de siliciure et formant un contact Schottky muni d'un canal. Plusieurs impuretés sont séparées sur l'interface siliciure/canal, et ces impuretés déterminent la résistance du contact Schottky. Cette ségrégation des impuretés est obtenue par un processus dit de ségrégation des impuretés par siliciuration. Des impuretés de silicium de substitution sont appropriées pour effectuer cette ségrégation.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)