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1. (WO2007005074) GROUP III NITRIDE LAYERS ON SILICON CARBIDE SUBSTRATES
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2007/005074    International Application No.:    PCT/US2006/010482
Publication Date: 11.01.2007 International Filing Date: 20.03.2006
Chapter 2 Demand Filed:    01.11.2006    
IPC:
H01L 29/778 (2006.01)
Applicants: CREE, INC. [US/US]; 4600 Silicon Drive, Durham, North Carolina 27703 (US) (For All Designated States Except US).
SAXLER, Adam, William [US/US]; (US) (For US Only)
Inventors: SAXLER, Adam, William; (US)
Agent: PENDLETON, Melissa, B.; SUMMA, ALAN & ADDITON, P.A., 11610 N. COMMUNITY HOUSE ROAD, Suite 200, Charlotte, North Carolina 28277 (US)
Priority Data:
11/169,471 29.06.2005 US
Title (EN) GROUP III NITRIDE LAYERS ON SILICON CARBIDE SUBSTRATES
(FR) COUCHES DE NITRURE DU GROUPE III SUR DES SUBSTRATS DE CARBURE DE SILICIUM
Abstract: front page image
(EN)Group III nitride semiconductor device structures are provided that include a silicon carbide (SiC) substrate and a Group III nitride epitaxial layer above the SiC substrate. The Group III nitride epitaxial layer has a dislocation density of less than about 4x108 cm-2 and/or an isolation voltage of at least about 50V.
(FR)L'invention concerne des structures de semiconducteurs en nitrure du Groupe III incluant un substrat en carbure de silicium (SiC) et une couche épitaxique de nitrure du Groupe III sur ce substrat en SiC. La couche épitaxique de nitrure du Groupe III a une densité des dislocations inférieure à environ 4x108 cm-2 et/ou une tension d'isolement d'au moins environ 50 V.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)