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1. (WO2007004890) REDUCTION OF ATTRACTION FORCES BETWEEN SILICON WAFERS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2007/004890    International Application No.:    PCT/NO2006/000244
Publication Date: 11.01.2007 International Filing Date: 26.06.2006
Chapter 2 Demand Filed:    30.04.2007    
IPC:
B28D 5/00 (2006.01), B23D 57/00 (2006.01), H01L 21/00 (2006.01)
Applicants: REC SCANWAFER AS [NO/NO]; Tormod Gjestlands Vei 41, N-3908 Porsgrunn (NO) (For All Designated States Except US).
SAUAR, Erik [NO/NO]; (NO) (For US Only).
WANG, Per Arne [NO/NO]; (NO) (For US Only)
Inventors: SAUAR, Erik; (NO).
WANG, Per Arne; (NO)
Agent: ONSAGERS AS; P.o. Box 6963 St. Olavs Plass, N-0130 Oslo (NO)
Priority Data:
60/695,451 01.07.2005 US
Title (EN) REDUCTION OF ATTRACTION FORCES BETWEEN SILICON WAFERS
(FR) RÉDUCTION DES FORCES D’ATTRACTION ENTRE DES TRANCHES DE SILICIUM
Abstract: front page image
(EN)The present invention is related to a method for reducing attraction forces between wafers (4). This method is characterized in that it comprises the step of, after sawing and before dissolution of the adhesive (5), introducing spacers (6) between wafers (4). The invention comprises also a wafer singulation method and an agent for use in said methods .
(FR)La présente invention concerne un procédé de réduction des forces d’attraction entre des tranches (4). Ce procédé est caractérisé en ce qu’il comprend l’étape, après le sciage et avant la dissolution de l’adhésif (5), d’introduction de pièces d’écartement (6) entre les tranches (4). L’invention concerne également un procédé de séparation de tranches et un agent utilisé dans lesdits procédés.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)