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1. (WO2007004807) MEMORY DEVICE USING ABRUPT METAL-INSULATOR TRANSITION AND METHOD OF OPERATING THE SAME
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/004807 International Application No.: PCT/KR2006/002534
Publication Date: 11.01.2007 International Filing Date: 29.06.2006
IPC:
H01L 27/115 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
10
including a plurality of individual components in a repetitive configuration
105
including field-effect components
112
Read-only memory structures
115
Electrically programmable read-only memories
Applicants:
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE [KR/KR]; 161 Gajeong-dong, Yusong-gu Daejeon-city 305-350, KR (AllExceptUS)
KIM, Hyun-Tak [KR/KR]; KR (UsOnly)
KIM, Bong-Jun [KR/KR]; KR (UsOnly)
KANG, Kwang-Yong [KR/KR]; KR (UsOnly)
YUN, Sun-Jin [KR/KR]; KR (UsOnly)
LEE, Yong-Wook [KR/KR]; KR (UsOnly)
CHAE, Byung-Gyu [KR/KR]; KR (UsOnly)
Inventors:
KIM, Hyun-Tak; KR
KIM, Bong-Jun; KR
KANG, Kwang-Yong; KR
YUN, Sun-Jin; KR
LEE, Yong-Wook; KR
CHAE, Byung-Gyu; KR
Agent:
Y.P.LEE, MOCK & PARTNERS; 1575-1 Seocho-dong, Seocho-gu Seoul 137-875, KR
Priority Data:
10-2005-005865430.06.2005KR
10-2006-001563417.02.2006KR
Title (EN) MEMORY DEVICE USING ABRUPT METAL-INSULATOR TRANSITION AND METHOD OF OPERATING THE SAME
(FR) DISPOSITIF DE MEMOIRE UTILISANT UNE TRANSITION D'ISOLANT METALLIQUE ABRUPTE ET SON PROCEDE DE FONCTIONNEMENT
Abstract:
(EN) Provided are a memory device that undergoes no structural phase change, maintains a uniform thin film, and can perform a high-speed switching operation, and a method of operating the same. The memory device includes a substrate, an abrupt MIT material layer, and a plurality of electrodes. The abrupt MIT material layer is disposed on the substrate and undergoes an abrupt metal-insulator transition by an energy change between electrons. The plurality of electrodes are brought into contact with the abrupt MIT material layer and are melted by heat to form a conductive path on the abrupt MIT material layer.
(FR) L'invention concerne, d'une part, un dispositif de mémoire qui ne subit pas de changement de phase structurel, maintient un film mince uniforme et peut réaliser une opération de commutation à vitesse élevée et, d'autre part, son procédé de fonctionnement. Ce dispositif de mémoire présente un substrat, une couche de matière à transition d'isolant métallique abrupte et plusieurs électrodes. Cette couche de matière à transition d'isolant métallique abrupte est disposée sur le substrat et subit une transition d'isolant métallique abrupte par le biais d'un changement d'énergie entre des électrons. La pluralité d'électrodes sont amenées en contact avec ladite couche de matière à transition d'isolant métallique abrupte et sont fondues thermiquement afin de constituer une voie conductrice sur la couche de matière à transition d'isolant métallique abrupte.
front page image
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
JP2009500844US20090114896CN101253629