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Machine translation
1. (WO2007004803) ORGANIC THIN FILM TRANSISTOR
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2007/004803    International Application No.:    PCT/KR2006/002504
Publication Date: 11.01.2007 International Filing Date: 28.06.2006
IPC:
H01L 29/786 (2006.01)
Applicants: LG CHEM, LTD. [KR/KR]; 20, Yoido-dong, Youngdungpo-gu, Seoul, 150-721 (KR)
Inventors: HWANG, In-Ho; (KR).
CHOI, Hyeon; (KR).
LEE, Min-Jeong; (KR).
LEE, Dong-Hoon; (KR).
KIM, Kong-Kyeom; (KR).
BAE, Jae-Soon; (KR).
LEE, Dae-Woong; (KR).
KIM, Jung-Bum; (KR)
Agent: HAN YANG PATENT FIRM; 9f Keungil Tower 677-25, Yeoksam-dong, Gangnam-gu, Seoul, 135-914 (KR)
Priority Data:
10-2005-0057717 30.06.2005 KR
10-2005-0107940 11.11.2005 KR
Title (EN) ORGANIC THIN FILM TRANSISTOR
(FR) TRANSISTOR A FILM MINCE ORGANIQUE
Abstract: front page image
(EN)The present invention relates to an organic thin film transistor which includes an organic layer comprising an organic compound facilitating the ohmic contact between a semi-conducting layer and electrodes and serving as the semi-conducting layer. The organic thin film transistor according to the present invention has excellent electric contact between the semiconductor layer and the source electrode/drain electrode, and thus can be widely used as components for electric/electronic devices. As a result, as the materials for the source electrode or the drain electrode in the organic thin film transistor, materials which are less expensive and excellent in processibility though they have a low work function as the materials can be used.
(FR)La présente invention concerne un transistor à film mince organique qui renferme une couche organique contenant un composé organique qui facilite le contact ohmique entre une couche semi-conductrice et des électrodes et qui agit comme la couche semi-conductrice. Ce transistor à film mince organique possède un contact électrique excellent entre la couche semi-conductrice et l'électrode source/l'électrode drain, et il peut, donc, être largement utilisé en tant que composants de dispositifs électriques/électroniques. Par conséquent, on peut utiliser, comme matières pour électrode source ou électrode drain dans ce transistor, des matières moins coûteuses et à excellente faculté de mise en oeuvre, bien qu'elles présentent un faible travail d'extraction comme lesdites matières.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: Korean (KO)