Search International and National Patent Collections
Some content of this application is unavailable at the moment.
If this situation persists, please contact us atFeedback&Contact
1. (WO2007004775) LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/004775 International Application No.: PCT/KR2005/003784
Publication Date: 11.01.2007 International Filing Date: 09.11.2005
IPC:
H01L 33/50 (2010.01) ,H01L 23/48 (2006.01) ,H01L 33/54 (2010.01) ,H01L 33/56 (2010.01) ,H01L 33/62 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
50
Wavelength conversion elements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
48
Arrangements for conducting electric current to or from the solid state body in operation, e.g. leadsĀ or terminal arrangements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
52
Encapsulations
54
having a particular shape
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
52
Encapsulations
56
Materials, e.g. epoxy or silicone resin
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
62
Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
Applicants:
SEOUL SEMICONDUCTOR CO., LTD. [KR/KR]; 148-29, Gasan-Dong Geumcheon-gu Seoul 153-023, KR (AllExceptUS)
KIM, Do, Hyung [KR/KR]; KR (UsOnly)
LEE, Chung-Hoon [KR/KR]; KR (UsOnly)
Inventors:
KIM, Do, Hyung; KR
LEE, Chung-Hoon; KR
Agent:
NAM, Seung-Hee; 12F, Seo-Jeon Bldg. 1330-9, Seocho-dong Seocho-gu Seoul 135-858, KR
Priority Data:
10-2005-005973604.07.2005KR
Title (EN) LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME
(FR) DIODE ÉMETTRICE DE LUMIÈRE ET SON PROCÉDÉ DE FABRICATION
Abstract:
(EN) The present invention relates to a light emitting diode and a method of fabricating the same, wherein the distance between a fluorescent substance and a light emitting diode chip is uniformly maintained to enhance luminous efficiency. To this end, there is provided a light emitting diode comprising at least one light emitting diode chip, lead terminals for use in applying electric power to the light emitting diode chip, and a frame that is used for mounting the light emitting diode chip thereon and is formed to have a predetermined height and a shape corresponding to that of the light emitting diode chip.
(FR) La présente invention concerne une diode émettrice de lumière et son procédé de fabrication, la distance entre une substance fluorescente et une puce de diode émettrice de lumière étant maintenue uniformément pour améliorer l’efficacité lumineuse. Cela mène à une diode émettrice de lumière comprenant au moins une puce de diode émettrice de lumière, des bornes de connecteur utilisées pour l'application d'un courant électrique à la puce de diode émettrice de lumière, et une structure servant à monter la puce de diode émettrice de lumière et présentant une hauteur prédéterminée et une forme correspondant à celle de la puce de diode émettrice de lumière.
front page image
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP1900040JP2008544568US20080217637US20110227123JP2012151499