Search International and National Patent Collections
Some content of this application is unavailable at the moment.
If this situation persists, please contact us atFeedback&Contact
1. (WO2007004741) COMPOUND SEMICONDUCTOR LIGHT-EMITTING DIODE AND METHOD FOR FABRICATION THEREOF
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/004741 International Application No.: PCT/JP2006/313800
Publication Date: 11.01.2007 International Filing Date: 05.07.2006
IPC:
H01L 33/00 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Applicants:
SHOWA DENKO K.K. [JP/JP]; 13-9, Shiba Daimon 1-chome Minato-ku Tokyo 105-8518, JP (AllExceptUS)
WATANABE, Takashi [JP/JP]; JP (UsOnly)
TAKEUCHI, Ryouichi [JP/JP]; JP (UsOnly)
Inventors:
WATANABE, Takashi; JP
TAKEUCHI, Ryouichi; JP
Agent:
FUKUDA, Kenzo ; Kashiwaya Bldg. 6-13, Nishishinbashi 1-chome Minato-ku, Tokyo 105-0003, JP
Priority Data:
2005-19700906.07.2005JP
60/700,34619.07.2005US
Title (EN) COMPOUND SEMICONDUCTOR LIGHT-EMITTING DIODE AND METHOD FOR FABRICATION THEREOF
(FR) DIODE ÉLECTROLUMINESCENTE À COMPOSÉ SEMI-CONDUCTEUR ET SON PROCÉDÉ DE FABRICATION
Abstract:
(EN) A compound semiconductor light-emitting diode includes a light-emitting layer 133 formed of aluminum-gallium-indium phosphide, a light-emitting part 13 having component layers individually formed of a Group III-V compound semiconductor, a transparent supporting layer 14 bonded to one of the outermost surface layers 135 of the light-emitting part 13 and transparent to the light emitted from the light-emitting layer 133, and a bonding layer 141 formed between the supporting layer 14 and the one of the outermost surface layers 135 of the light-emitting part 13 containing oxygen atoms at a concentration of 1 x 1020 CM -3 or less. The compound semiconductor light-emitting diode can avoid exertion of stress on the light-emitting part, suppress the occurrence of a crystal defect, enhance the bonding strength between the light-emitting part and the supporting layer, further decrease electric resistance in the bonding interface and thereby enhance the forward voltage (Vf), also heighten the reverse voltage and materialize impartation of high luminance:
(FR) La présente invention concerne une diode électroluminescente à composé semi-conducteur comprenant une couche électroluminescente (133) formée de phosphure d’aluminium/gallium/indium, un élément électroluminescent (13) doté de couches de composants formées chacune d’un composé semi-conducteur de groupe III-V, une couche de support transparente (14) fixée à l’une des couches de surface extérieure (135) de l’élément (13) et transparente à la lumière émise par la couche électroluminescente (133), et une couche de liaison (141) formée entre la couche de support (14) et l’une des couches de surface extérieures (135) de l’élément (13) contenant des atomes d’oxygène à une concentration inférieure ou égale à 1 x 1020 cm-3. La diode électroluminescente à composé semi-conducteur permet d’éviter l’exercice d’une contrainte sur l’élément électroluminescent et l’apparition d’un défaut de cristal, d’améliorer la cohésion de liaison entre l’élément et la couche de support, de réduire davantage la résistance électrique dans l’interface de liaison et ainsi accroître la tension directe (Vf), d’élever la tension inverse et d’obtenir une forte luminance.
front page image
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP1900042JP2007019124US20090121242US20110037087CN101218686