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1. (WO2007004612) METHOD OF PRODUCING SUBSTRATE UNDER CONTROLLING ORGANIC MATTER CONCENTRATION IN STRIPPING LIQUOR
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/004612 International Application No.: PCT/JP2006/313234
Publication Date: 11.01.2007 International Filing Date: 03.07.2006
IPC:
H01L 21/304 (2006.01) ,B08B 3/08 (2006.01) ,G03F 7/42 (2006.01) ,H01L 21/027 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304
Mechanical treatment, e.g. grinding, polishing, cutting
B PERFORMING OPERATIONS; TRANSPORTING
08
CLEANING
B
CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
3
Cleaning by methods involving the use or presence of liquid or steam
04
Cleaning involving contact with liquid
08
the liquid having chemical or dissolving effect
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26
Processing photosensitive materials; Apparatus therefor
42
Stripping or agents therefor
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
027
Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
Applicants:
東亞合成株式会社 TOAGOSEI CO., LTD. [JP/JP]; 〒1058419 東京都港区西新橋1丁目14番1号 Tokyo 14-1, Nishi-Shimbashi 1-chome, Minato-ku, Tokyo 1058419, JP (AllExceptUS)
津田 隆 TSUDA, Takashi; null (UsOnly)
住田 正直 SUMITA, Masanao; null (UsOnly)
原田 勝可 HARADA, Katsuyoshi; null (UsOnly)
Inventors:
津田 隆 TSUDA, Takashi; null
住田 正直 SUMITA, Masanao; null
原田 勝可 HARADA, Katsuyoshi; null
Agent:
津国 肇 TSUKUNI, Hajime; 〒1050001 東京都港区虎ノ門1丁目22番12号 SVAX TSビル Tokyo SVAX TS Bldg. 22-12, Toranomon 1-chome Minato-ku Tokyo 1050001, JP
Priority Data:
2005-19585005.07.2005JP
Title (EN) METHOD OF PRODUCING SUBSTRATE UNDER CONTROLLING ORGANIC MATTER CONCENTRATION IN STRIPPING LIQUOR
(FR) PROCÉDÉ DE PRODUCTION D'UN SUBSTRAT EN RÉGULANT LA CONCENTRATION EN MATIÈRES ORGANIQUES DANS LA SOLUTION DE DÉCAPAGE
(JA) 剥離液中の有機物濃度を管理した基体の製造方法
Abstract:
(EN) A method of producing a substrate which comprises the stripping stage consisting of the step of treating a stripping liquor containing organic matters originating in a stripped coating dissolved therein to give a regenerated stripping liquor and the step of bringing fresh supplied stripping liquor and the regenerated stripping liquor into contact with a coating on a substrate, and the removal stage consisting of the step of washing with water the surface of the substrate from which the coating has been stripped off in the stripping stage and the step of drying the washed substrate with a drying air stream, wherein the organic matters remaining on the substrate after the removal stage is not more than a definite control level.
(FR) La présente invention concerne un procédé de production d'un substrat qui comprend un stade de décapage, consistant en une étape de traitement d'une solution de décapage qui contient des matières organiques provenant d'un revêtement décapé qui y a été dissous afin d'obtenir une solution de décapage régénérée et en une étape de mise d'une solution de décapage fraîche et de la solution de décapage régénérée au contact d'un revêtement sur un substrat, et un stade d'élimination, consistant en une étape de lavage à l'eau de la surface du substrat d'où le revêtement a été décapé lors du stade de décapage et en une étape de séchage du substrat lavé par un courant d'air de séchage, les matières organiques restant sur le substrat après le stade d'élimination ne dépassant pas un seuil défini.
(JA)  剥離した被膜物質由来の有機物が溶解した剥離液を再生剥離液にする処理を行う工程と、新たに補充された剥離液と再生剥離液とを基体上の被膜物質に接触させて、基体から被膜物質を剥離する工程と、を含む剥離工程と、剥離工程により被膜物質が剥離された基体の表面を水で洗浄する工程と、洗浄された基体を乾燥空気により乾燥する工程と、を含む除去工程と、を含む基体の製造方法であって、除去工程が行われた基体上の有機物の残渣が、所定の管理値以下である基体の製造方法を提供する。
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Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
KR1020080024485