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Machine translation
1. (WO2007004295) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2007/004295    International Application No.:    PCT/JP2005/012404
Publication Date: 11.01.2007 International Filing Date: 05.07.2005
IPC:
H01L 21/8246 (2006.01), H01L 27/105 (2006.01)
Applicants: FUJITSU LIMITED [JP/JP]; 1-1, Kamikodanaka 4-chome Nakahara-ku Kawasaki-shi, Kanagawa 2118588 (JP) (For All Designated States Except US).
TAKAHASHI, Makoto [JP/JP]; (JP) (For US Only).
NAGAI, Kouichi [JP/JP]; (JP) (For US Only)
Inventors: TAKAHASHI, Makoto; (JP).
NAGAI, Kouichi; (JP)
Agent: KOKUBUN, Takayoshi; 5th Floor, Ikebukuro TG Homest Building 17-8, Higashi-Ikebukuro 1-chome Toshima-ku, Tokyo 1700013 (JP)
Priority Data:
Title (EN) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
(FR) DISPOSITIF À SEMI-CONDUCTEUR ET SON PROCÉDÉ DE FABRICATION
(JA) 半導体装置及びその製造方法
Abstract: front page image
(EN)A surface of a lower layer insulating film (55) is planarized by CMP method or the like, and an upper layer insulating film (56) and a metal protecting film (59) are formed on the lower layer insulating film (55). Therefore, the upper layer insulating film (56) and the metal protecting film (59) are formed in a status having excellent coverage, and a water/hydrogen blocking function of the upper layer insulating film (56) and the metal protecting film (59) are maximized.
(FR)La présente invention concerne un procédé consistant à planariser une surface d’un film isolant de couche inférieure (55) par polissage chimico-mécanique ou procédé similaire, et à former un film isolant de couche supérieure (56) et un film de protection métallique (59) sur le film isolant de couche inférieure (55). Ainsi, le film isolant de couche supérieure (56) et le film de protection métallique (59) obtenus présentent une excellente couverture, et une fonction d’étanchéité/blocage d’hydrogène du premier film (56) et du second film (59) est optimisée.
(JA) 本発明では、下層絶縁膜(55)の表面をCMP法等により平坦化し、この下層絶縁膜(55)上に上層絶縁膜(56)や金属保護膜(59)を形成する。従って、上層絶縁膜(56)及び金属保護膜(59)がカバレッジに優れた状態に形成されることになり、上層絶縁膜(56)及び金属保護膜(59)の水・水素の遮蔽機能を最大限に発揮させることができる。
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)