Search International and National Patent Collections
Some content of this application is unavailable at the moment.
If this situation persists, please contact us atFeedback&Contact
1. (WO2007004282) SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING THE SAME
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/004282 International Application No.: PCT/JP2005/012314
Publication Date: 11.01.2007 International Filing Date: 04.07.2005
IPC:
H01L 27/105 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
10
including a plurality of individual components in a repetitive configuration
105
including field-effect components
Applicants:
富士通株式会社 FUJITSU LIMITED [JP/JP]; 〒2118588 神奈川県川崎市中原区上小田中4丁目1番1号 Kanagawa 1-1, Kamikodanaka 4-chome, Nakahara-ku, Kawasaki-shi, Kanagawa 2118588, JP (AllExceptUS)
永井 孝一 NAGAI, Kouichi [JP/JP]; JP (UsOnly)
佐藤 勝広 SATO, Katsuhiro [JP/JP]; JP (UsOnly)
菅原 薫 SUGAWARA, Kaoru [JP/JP]; JP (UsOnly)
高橋 誠 TAKAHASHI, Makoto [JP/JP]; JP (UsOnly)
工藤 正仁 KUDOU, Masahito [JP/JP]; JP (UsOnly)
浅井 一弘 ASAI, Kazuhiro [JP/JP]; JP (UsOnly)
宮崎 幸正 MIYAZAKI, Yukimasa [JP/JP]; JP (UsOnly)
西郷 薫 SAIGOH, Kaoru [JP/JP]; JP (UsOnly)
Inventors:
永井 孝一 NAGAI, Kouichi; JP
佐藤 勝広 SATO, Katsuhiro; JP
菅原 薫 SUGAWARA, Kaoru; JP
高橋 誠 TAKAHASHI, Makoto; JP
工藤 正仁 KUDOU, Masahito; JP
浅井 一弘 ASAI, Kazuhiro; JP
宮崎 幸正 MIYAZAKI, Yukimasa; JP
西郷 薫 SAIGOH, Kaoru; JP
Agent:
國分 孝悦 KOKUBUN, Takayoshi; 〒1700013 東京都豊島区東池袋1丁目17番8号 池袋TGホーメストビル5階 Tokyo 5th floor Ikebukuro TG Homest Building 17-8, Higashi-Ikebukuro 1-chome Toshima-ku Tokyo 170-0013, JP
Priority Data:
Title (EN) SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING THE SAME
(FR) COMPOSANT À SEMI-CONDUCTEUR ET SON PROCÉDÉ DE FABRICATION
(JA) 半導体装置及びその製造方法
Abstract:
(EN) A protective film (56) having a water/hydrogen shielding function is formed so as to cover the periphery of a pad electrode (54a) in such a state that is electrically insulated from the pad electrode. A highly moisture resistant electrically conductive material, which has a significantly higher water/hydrogen shielding function than insulating materials, specifically palladium (Pd) or a palladium-containing material, iridium (Ir) or iridium oxide (IrOx wherein x is typically 2) or an iridium- or iridium oxide-containing material is used as the material for the protective film. A highly reliable FeRAM can be realized which can surely prevent the internal entry of water/hydrogen in a relatively simple construction, and can maintain high performance of a ferroelectric capacitor structure (30).
(FR) L'invention concerne un film protecteur (56) présentant une fonction de protection contre l'eau/l'hydrogène qui est formé de façon à recouvrir la périphérie de l'électrode d'une plage de connexion (54a) dans un état tel qu'elle est isolée de l'électrode de la plage de connexion. Un matériau conducteur électriquement hautement résistant à l'humidité, qui présente une fonction de protection contre l'eau/l'hydrogène significativement supérieure à celle de matériaux isolants, en particulier du palladium (Pd) ou un matériau contenant du palladium, de l'iridium (Ir) ou un oxyde d'iridium (IrOx où x vaut de manière caractéristique 2) ou un matériau contenant de l'iridium ou un oxyde d'iridium, est utilisé en tant que matériau pour le film protecteur. Une mémoire FeRAM très fiable peut être réalisée, laquelle prévient de manière sûre l'entrée d'eau/d'hydrogène selon une conception relativement simple, et elle peut maintenir les performances élevées d'une structure de condensateur ferroélectrique (30).
(JA)  パッド電極(54a)の周囲を覆うように、当該パッド電極と電気的に絶縁した状態に、水・水素遮断機能を有する保護膜(56)を形成する。保護膜材料の選択として、絶縁材料よりも顕著に水・水素遮断機能を示す高い耐湿性を有する導電材料、本発明ではパラジウム(Pd)又はこれを含有する材料か、イリジウム(Ir)又はイリジウム酸化物(IrO:典型的にはx=2)又はこれらを含有する材料を用いる。比較的簡易な構成で十分な水・水素の内部侵入を確実に防止し、強誘電体キャパシタ構造(30)の高性能を保持する信頼性の高いFeRAMが実現する。
front page image
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
KR1020080011230CN101213667JP4985401