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1. (WO2007004272) METHOD FOR PREDICTING DISTRIBUTION OF IMPURITY CONCENTRATION AND PROGRAM FOR DETERMINING IMPURITY CONCENTRATION
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/004272 International Application No.: PCT/JP2005/012138
Publication Date: 11.01.2007 International Filing Date: 30.06.2005
IPC:
H01L 21/265 (2006.01) ,H01L 21/66 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26
Bombardment with wave or particle radiation
263
with high-energy radiation
265
producing ion implantation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
66
Testing or measuring during manufacture or treatment
Applicants:
富士通株式会社 FUJITSU LIMITED [JP/JP]; 〒2118588 神奈川県川崎市中原区上小田中4丁目1番1号 Kanagawa 1-1, Kamikodanaka 4-chome, Nakahara-ku, Kawasaki-shi, Kanagawa 2118588, JP (AllExceptUS)
鈴木邦広 SUZUKI, Kunihiro [JP/JP]; JP (UsOnly)
Inventors:
鈴木邦広 SUZUKI, Kunihiro; JP
Agent:
高橋敬四郎 TAKAHASHI, Keishiro; 〒1100016 東京都台東区台東3丁目12番1号 御徒町東誠ビル4階 高橋来山特許事務所 Tokyo TAKAHASHI & KITAYAMA 4th Fl., Okachimachi Tohsei Bldg. 3-12-1, Taito Taito-ku, Tokyo 1100016, JP
Priority Data:
Title (EN) METHOD FOR PREDICTING DISTRIBUTION OF IMPURITY CONCENTRATION AND PROGRAM FOR DETERMINING IMPURITY CONCENTRATION
(FR) PROCÉDÉ DESTINÉ À PRÉVOIR LA DISTRIBUTION DE LA CONCENTRATION DES IMPURETÉS ET PROGRAMME POUR DÉTERMINER LA CONCENTRATION DES IMPURETÉS
(JA) 不純物濃度分布の予測方法及び不純物濃度分布を決定するプログラム
Abstract:
(EN) [PROBLEMS] To provide a method for predicting distribution of impurity concentration in which lateral spreading of impurities can be evaluated when ions are implanted while reducing restrictions. [MEANS FOR SOLVING PROBLEMS] A first evaluation substrate whose direction perpendicular to the surface is specified by a first index, and a second evaluation substrate where the direction specified by the first index is inclining from the normal line direction of the surface are prepared. The first evaluation substrate is implanted with ions from the perpendicular direction. The second evaluation substrate is implanted with ions by using an ion beam parallel with the direction specified by the first index. Distribution of impurity concentration in the depth direction is measured for the first and second evaluation substrates. Based on the distribution of impurity concentration measured for the first and second evaluation substrates, first distribution of impurity concentration on the extension of the ion beam and second distribution of impurity concentration in the direction intersecting the extension perpendicularly are predicted.
(FR) Le problème à résoudre dans le cadre de la présente invention consiste à fournir un procédé destiné à prévoir la distribution de la concentration des impuretés selon lequel la propagation latérale des impuretés peut être évaluée lorsque des ions sont implantés tout en réduisant les restrictions. La solution proposée est de préparer un premier substrat d'évaluation dont la direction perpendiculaire à la surface est indiquée par un premier indice, et un second substrat d'évaluation, la direction indiquée par le premier indice étant inclinée par rapport à la direction de la ligne normale de la surface. Le premier substrat d'évaluation est implanté d’ions à partir de la direction perpendiculaire. Le second substrat d'évaluation est implanté d’ions en utilisant un faisceau d'ions parallèle à la direction indiquée par le premier indice. La distribution de la concentration des impuretés dans la direction de la profondeur est mesurée pour les premier et second substrats d'évaluation. Sur la base de la distribution de la concentration des impuretés mesurée pour les premier et second substrats d'évaluation, on prévoit la première distribution de la concentration des impuretés sur l’extension du faisceau d'ions et la seconde distribution de la concentration des impuretés dans la direction formant une intersection perpendiculaire avec l’extension.
(JA) 【課題】 イオン注入時の不純物の横方向への広がりを評価することができ、かつ制約条件の少ない不純物濃度分布の予測方法を提供する。 【解決手段】 表面に垂直な方向が第1の指数で与えられる第1の評価用基板と、第1の指数で与えられる方向が表面の法線方向から傾斜している第2の評価用基板とを準備する。第1の評価用基板に、垂直方向からイオン注入を行う。第2の評価用基板に、第1の指数で与えられる方向と平行なイオンビームを用いてイオン注入を行う。第1の評価用基板及び第2の評価用基板について、深さ方向に関する不純物濃度分布を測定する。測定された第1の評価用基板の不純物濃度分布と第2の評価用基板の不純物濃度分布とに基づいて、イオンビームの延長線上における第1の不純物濃度分布と、該延長線に直交する方向に関する第2の不純物濃度分布とを予測する。
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Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
JP4866850