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1. (WO2007004177) METHOD OF MEASURING DEEP TRENCHES WITH MODEL-BASED OPTICAL SPECTROSCOPY
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2007/004177    International Application No.:    PCT/IB2006/052211
Publication Date: 11.01.2007 International Filing Date: 30.06.2006
IPC:
G01B 11/02 (2006.01)
Applicants: ADVANCED METROLOGY SYSTEMS LLC. [US/US]; 12 Michigan Drive, Natick, Massachussets 01760 (US) (For All Designated States Except US).
ROSENTHAL, Peter [US/US]; (US) (For US Only).
DURAN, Carlos [AR/US]; (US) (For US Only).
MAZNEV, Alexei [RU/US]; (US) (For US Only).
MAZURENKO, Alex [US/US]; (US) (For US Only)
Inventors: ROSENTHAL, Peter; (US).
DURAN, Carlos; (US).
MAZNEV, Alexei; (US).
MAZURENKO, Alex; (US)
Agent: FRANK, Steven, J.; c/o Goodwin Procter LLP, Exchange Place, 53 State Street, Boston, MA 02109 (US)
Priority Data:
60/696,831 06.07.2005 US
Title (EN) METHOD OF MEASURING DEEP TRENCHES WITH MODEL-BASED OPTICAL SPECTROSCOPY
(FR) PROCEDE SERVANT A MESURER DES TRANCHEES PROFONDES AU MOYEN D'UNE TECHNIQUE DE SPECTROSCOPIE OPTIQUE BASEE MODELE
Abstract: front page image
(EN)The invention represents an improved method of measuring trenches on semiconductor wafers with optical spectroscopy. According to the described method, it is possible to characterize not only depth but also shape of the trench. The advancement is achieved by improved Effective Medium Approximation - based modeling of the optical response of trench structures.
(FR)L'invention concerne un procédé amélioré de mesure de tranchées sur des tranches de semi-conducteur au moyen de la spectroscopie optique. Selon ce procédé, il est possible de caractériser non seulement la profondeur mais également la forme de la tranchée. Ceci est exécuté au moyen d'une modélisation améliorée basée sur une approximation moyenne effective (Effective Medium Approximation) de la réponse optique des structures de la tranchée.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)