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1. (WO2007004130) PIXEL PERFROMANCE IMPROVEMENT BY USE OF A FIELD-SHIELD
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/004130 International Application No.: PCT/IB2006/052136
Publication Date: 11.01.2007 International Filing Date: 27.06.2006
IPC:
H01L 27/32 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28
including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
32
with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
Applicants:
POLYMER VISION LIMITED [NL/NL]; High Tech Campus 48 NL-5656 AE Eindhoven, NL (AllExceptUS)
HUITEMA, Hjalmar Edzer Ayco [NL/NL]; NL (UsOnly)
GELINCK, Gerwin Hermanus [NL/NL]; NL (UsOnly)
Inventors:
HUITEMA, Hjalmar Edzer Ayco; NL
GELINCK, Gerwin Hermanus; NL
Agent:
VAN LOON, C., J., J.; C/o Vereenigde Johan De Wittlaan 7 NL-2517 JR The Hague, NL
Priority Data:
60/695,66530.06.2005US
Title (EN) PIXEL PERFROMANCE IMPROVEMENT BY USE OF A FIELD-SHIELD
(FR) AMELIORATION DE L'EFFICACITE DES PIXELS AU MOYEN D'UN BLINDAGE DE CHAMP
Abstract:
(EN) A pixel cell (100) and method for making the same for an active matrix display includes a pixel pad (110) and a thin film field effect transistor (106) which selectably couples a signal to activate/deactivate the pixel pad. A field shield (112) is formed on an insulating layer (102) and connected to the pixel pad through the insulating layer such that the field shield extends over at least a portion of the pixel pad. The field shield may extend over the thin film transistor and form a second gate (215) used to enhance the performance of the thin film transistor and the pixel cell.
(FR) La présente invention concerne une cellule pixel (100) et un procédé de formation de cette dernière pour un affichage à matrice active comprenant une zone de pixel (110) et un transistor à film mince à effet de champ (106) qui couple sélectivement un signal pour activer/désactiver la zone de pixel. Un blindage de champ (112) est formé sur une couche isolante (102) et connecté à la zone de pixel par la couche isolante de sorte que le blindage de champ s'étende au-dessus d'au moins une partie de la zone de pixel. Le blindage de champ peut s'étendre au-dessus du transistor à film mince et former une deuxième porte (215) servant à améliorer l'efficacité du transistor à film mince et de la cellule pixel.
front page image
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
KR1020080065578EP1900032JP2008545155US20100163875CN101288171