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1. (WO2007004096) METHODS OF FABRICATING CRYSTALLINE SILICON FILM AND THIN FILM TRANSISTORS

Pub. No.:    WO/2007/004096    International Application No.:    PCT/IB2006/052046
Publication Date: Jan 11, 2007 International Filing Date: Jun 23, 2006
IPC: H01L 21/322
H01L 21/324
H01L 21/20
H01L 21/336
H01L 29/786
Applicants: KAKKAD, Ramesh
Inventors: KAKKAD, Ramesh
Title: METHODS OF FABRICATING CRYSTALLINE SILICON FILM AND THIN FILM TRANSISTORS
Abstract:
A method by which solid phase crystallization (SPC) thermal budget for crystallizing an undoped (or a lightly doped) amorphous Si (a-Si) is significantly reduced. First, a composite layer structure consisting of an undoped (or a lightly doped) a-Si layer (60) and a heavily doped (either p-type or n-type) a-Si layer (61 ) is formed and it is subsequently annealed at an elevated temperature (62). The solid phase crystallization starts from the heavily doped amorphus silicon layer at a substantially reduced thermal budget and proceeds to crystallize the undoped amorphous silicon layer in contact with the heavily doped film at reduced thermal budget. The method can be applied to form poly silicon thin film transistor at reduced thermal budgets.