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Machine translation
1. (WO2007002860) PASSIVATION OF WIDE BAND-GAP BASED SEMICONDUCTOR DEVICES WITH HYDROGEN-FREE SPUTTERED NITRIDES
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2007/002860    International Application No.:    PCT/US2006/025447
Publication Date: 04.01.2007 International Filing Date: 28.06.2006
IPC:
H01L 21/314 (2006.01), H01L 21/318 (2006.01)
Applicants: CREE, INC. [US/US]; 4600 Silicon Drive, Durham, NC 27703 (US) (For All Designated States Except US).
RING, Zoltan [US/US]; (US) (For US Only).
HAGLEITNER, Helmut [US/US]; (US) (For US Only).
HENNING, Jason, Patrick [US/US]; (US) (For US Only).
MACKENZIE, Andrew [US/US]; (US) (For US Only).
ALLEN, Scott, T. [US/US]; (US) (For US Only).
SHEPPARD, Scott, Thomas [US/US]; (US) (For US Only).
SMITH, Richard, Peter [US/US]; (US) (For US Only).
SRIRAM, Saptharishi [US/US]; (US) (For US Only).
WARD, Allan, III [US/US]; (US) (For US Only)
Inventors: RING, Zoltan; (US).
HAGLEITNER, Helmut; (US).
HENNING, Jason, Patrick; (US).
MACKENZIE, Andrew; (US).
ALLEN, Scott, T.; (US).
SHEPPARD, Scott, Thomas; (US).
SMITH, Richard, Peter; (US).
SRIRAM, Saptharishi; (US).
WARD, Allan, III; (US)
Agent: SUMMA, Philip; SUMMA, ALLAN & ADDITON, P.A., 11610 N. COMMUNITY HOUSE RD., Suite 200, Charlotte, NC 29277 (US)
Priority Data:
11/169,378 29.06.2005 US
Title (EN) PASSIVATION OF WIDE BAND-GAP BASED SEMICONDUCTOR DEVICES WITH HYDROGEN-FREE SPUTTERED NITRIDES
(FR) PASSIVATION DE DISPOSITIFS SEMI-CONDUCTEURS À BASE DE LARGE BANDE INTERDITE AVEC NITRURES PULVÉRISÉS SANS HYDROGÈNE
Abstract: front page image
(EN)A passivated semiconductor structure and associated method are disclosed. The structure includes a silicon carbide substrate or layer; an oxidation layer on the silicon carbide substrate for lowering the interface density between the silicon carbide substrate and the thermal oxidation layer; a first sputtered non-stoichiometric silicon nitride layer on the thermal oxidation layer for reducing parasitic capacitance and minimizing device trapping; a second sputtered non-stoichiometric silicon nitride layer on the first layer for positioning subsequent passivation layers further from the substrate without encapsulating the structure; a sputtered stoichiometric silicon nitride layer on the second sputtered layer for encapsulating the structure and for enhancing the hydrogen barrier properties of the passivation layers; and a chemical vapor deposited environmental barrier layer of stoichiometric silicon nitride for step coverage and crack prevention on the encapsulant layer.
(FR)L’invention concerne une structure semi-conductrice passivée et un procédé associé. La structure comporte un substrat ou une couche de carbure de silicium ; une couche d’oxydation sur le substrat de carbure de silicium pour abaisser la densité d’interface entre le substrat de carbure de silicium et la couche d’oxydation thermique ; une première couche pulvérisée de nitrure de silicium non stoechiométrique sur la couche d’oxydation thermique pour réduire la capacitance parasitique et minimiser le piégeage du dispositif ; une seconde couche pulvérisée de nitrure de silicium non stoechiométrique sur la première couche pour positionner les couches de passivation subséquentes plus loin du substrat sans encapsuler la structure ; une couche pulvérisée de nitrure de silicium stoechiométrique sur la seconde couche pulvérisée permettant d’encapsuler la structure et de renforcer les propriétés de protection contre l’hydrogène des couches de passivation ; et une couche de protection environnementale déposée en phase gazeuse de nitrure de silicium stoechiométrique pour recouvrement graduel et prévention des fissures sur la couche d’encapsulation.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)