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1. (WO2007002757) INPUT POWER PROTECTED RATIOMETRIC OUTPUT SENSOR CIRCUIT
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/002757 International Application No.: PCT/US2006/025189
Publication Date: 04.01.2007 International Filing Date: 27.06.2006
IPC:
H01L 31/058 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04
adapted as conversion devices
042
including a panel or array of photoelectric cells, e.g. solar cells
058
including means to utilise heat energy, e.g. hybrid systems, or a supplementary source of electric energy
Applicants:
DELPHI TECHNOLOGIES, INC. [US/US]; PO BOX 5052 Mail Code: 480-410-202 Troy, MI 48007-5052, US (AllExceptUS)
YINGJIE, Lin [US/US]; US (UsOnly)
Inventors:
YINGJIE, Lin; US
Agent:
GRIFFIN, Patrick, M.; DELPHI TECHNOLOGIES, INC. PO BOX 5052 Mail Code: 480-410-202 Troy, MI 48007-5052, US
Priority Data:
11/472,80222.06.2006US
60/694,83329.06.2005US
Title (EN) INPUT POWER PROTECTED RATIOMETRIC OUTPUT SENSOR CIRCUIT
(FR) CIRCUIT DE DETECTION A SORTIE RATIOMETRIQUE PROTEGE PAR LA PUISSANCE D'ENTREE
Abstract:
(EN) MOSFETs (30, 40) are provided to connect the sensor input terminals (22, 24) of a ratiometric output sensor (20) to a pair of power terminals (12, 14), and the gate of each MOSFET is coupled to the opposite power terminal so that both MOSFETs are rendered conducting to power the sensor when a supply voltage of a predetermined polarity is connected across the power terminals but one of the MOSFETs (40) is rendered non-conducting when a voltage of the opposite polarity is so applied. The MOSFET that is rendered non-conducting is oriented so that any internal source-drain diode (48) does not bypass current around the MOSFET when voltage of the opposite polarity is applied. Optionally, over-voltage protection is provided by an input voltage sensor (64, 66) controlling the other MOSFET (30) through a third MOSFET (50).
(FR) Selon l'invention, des MOSFET (30, 40) sont utilisés pour connecter les bornes d'entrée (22, 24) d'un détecteur à sortie ratiométrique (20), à une paire de bornes d'alimentation (12, 14), la porte de chaque MOSFET étant couplée à la borne d'alimentation opposée de sorte que les deux MOSFET sont rendus conducteurs pour alimenter le détecteur lorsqu'une tension d'alimentation d'une polarité prédéterminée est appliquée aux bornes d'alimentation, mais l'un des MOSFET (40) étant rendu non conducteur lorsqu'une tension de polarité inverse est appliquée. Le MOSFET qui est rendu non conducteur, est orienté de sorte que toute diode source-drain interne (48) n'empêche pas le courant de traverser le MOSFET lorsque la tension de polarité opposée est appliquée. Eventuellement, une protection contre la surtension est assurée par un détecteur de tension d'entrée (64, 66) qui commande l'autre MOSFET (30) par un troisième MOSFET (50).
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP1900039