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1. (WO2007002673) BETA-DIKETIMINATE LIGAND SOURCES AND METAL-CONTAINING COMPOUNDS THEREOF, AND SYSTEMS AND METHODS INCLUDING SAME
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/002673 International Application No.: PCT/US2006/024996
Publication Date: 04.01.2007 International Filing Date: 27.06.2006
IPC:
H01L 21/316 (2006.01) ,C23C 16/40 (2006.01) ,C07F 3/00 (2006.01) ,C07F 5/00 (2006.01) ,C07C 51/12 (2006.01) ,H01L 21/314 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
314
Inorganic layers
316
composed of oxides or glassy oxides or oxide-based glass
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
22
characterised by the deposition of inorganic material, other than metallic material
30
Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
40
Oxides
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
F
ACYCLIC, CARBOCYCLIC, OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
3
Compounds containing elements of the 2nd Group of the Periodic System
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
F
ACYCLIC, CARBOCYCLIC, OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
5
Compounds containing elements of the 3rd Group of the Periodic System
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
C
ACYCLIC OR CARBOCYCLIC COMPOUNDS
51
Preparation of carboxylic acids or their salts, halides, or anhydrides
10
by reaction with carbon monoxide
12
on an oxygen-containing group in organic compounds, e.g. alcohols
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
314
Inorganic layers
Applicants:
MICRON TECHNOLOGY, INC. [US/US]; 8000 South Federal Way Boise, ID 83707, US (AllExceptUS)
MILLWARD, Dan [US/US]; US (UsOnly)
QUICK, Timothy, A. [US/US]; US (UsOnly)
Inventors:
MILLWARD, Dan; US
QUICK, Timothy, A.; US
Agent:
ALBIN, Loren, D.; Mueting, Raasch & Gebhardt, P.A. P.O. Box 581415 Minneapolis, MN 55458-1415, US
Priority Data:
11/169,06528.06.2005US
Title (EN) BETA-DIKETIMINATE LIGAND SOURCES AND METAL-CONTAINING COMPOUNDS THEREOF, AND SYSTEMS AND METHODS INCLUDING SAME
(FR) SOURCES DE LIGANDS DE TYPE ANIONS DE LA 2,4-PENTANEDIIMINE ET COMPOSÉS DE CEUX-CI CONTENANT UN MÉTAL ET SYSTÈMES ET PROCÉDÉS COMPRENANT CEUX-CI
Abstract:
(EN) The present invention provides metal-containing compounds that include at least one &bgr;-diketiminate ligand, and methods of making and using the same. In certain embodiments, the metal-containing compounds include at least one &bgr;-diketiminate ligand with at least one fluorine-containing organic group as a substituent. In other certain embodiments, the metal-containing compounds include at least one &bgr;-diketiminate ligand with at least one aliphatic group as a substituent selected to have greater degrees of freedom than the corresponding substituent in the &bgr;-diketiminate ligands of certain metal-containing compounds known in the art. The compounds can be used to deposit metal-containing layers using vapor deposition methods. Vapor deposition systems including the compounds are also provided. Sources for &bgr;-diketiminate ligands are also provided.
(FR) La présente invention concerne des composés contenant un métal qui comprennent au moins un ligand de type anion de la 2,4-pentanediimine et des procédés de fabrication et d'utilisation de ceux-ci. Dans certains modes de réalisation, les composés contenant un métal comprennent au moins un ligand de type anion de la 2,4-pentanediimine ayant au moins un groupe organique contenant du fluor comme substituant. Dans certains autres modes de réalisation, les composés contenant un métal comprennent au moins un ligand de type anion de la 2,4-pentanediimine ayant au moins un groupe aliphatique comme substituant sélectionné pour avoir des degrés de liberté plus grands que le substituant correspondant dans les ligands de type anions de la 2,4-pentanediimine de certains composés contenant un métal connus dans l'art. Les composés peuvent être utilisés pour déposer des couches contenant un métal en utilisant des procédés de déposition en phase vapeur. L'invention concerne également des systèmes de déposition en phase vapeur comprenant les composés. L'invention concerne également des sources pour les ligands de type anions de la 2,4-pentanediimine.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
KR1020080021708EP1911074JP2009503247CN101208784