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1. (WO2007002607) ELECTRONIC AND/OR OPTOELECTRONIC DEVICES GROWN ON FREE-STANDING GaN SUBSTRATES WITH GaN SPACER STRUCTURES
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/002607 International Application No.: PCT/US2006/024849
Publication Date: 04.01.2007 International Filing Date: 27.06.2006
IPC:
H01L 33/06 (2010.01) ,H01L 33/32 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
04
with a quantum effect structure or superlattice, e.g. tunnel junction
06
within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
26
Materials of the light emitting region
30
containing only elements of group III and group V of the periodic system
32
containing nitrogen
Applicants:
CREE, INC. [US/US]; 4600 Silicon Drive Durham, NC 27703, US (AllExceptUS)
HUTCHINS, Edward, Lloyd [US/US]; US (UsOnly)
Inventors:
HUTCHINS, Edward, Lloyd; US
Agent:
HULTQUIST, Steven, J.; Intellectual Property/Technology Law P.O. Box 14329 Research Triangle Park, NC 27709, US
Priority Data:
11/168,50128.06.2005US
Title (EN) ELECTRONIC AND/OR OPTOELECTRONIC DEVICES GROWN ON FREE-STANDING GaN SUBSTRATES WITH GaN SPACER STRUCTURES
(FR) DISPOSITIFS ÉLECTRONIQUES ET/OU OPTOÉLECTRONIQUES DÉVELOPPÉS SUR DES SUBSTRATS AUTOPORTEURS DE GaN AVEC DES STRUCTURES D’ENTRETOISES EN GaN
Abstract:
(EN) A GaN-based electronic and/or optoelectronic device (10) formed on a free-standing GaN substrate (12), wherein a thick GaN spacer layer (14) is provided between the device and the substrate, thereby separating the active region of the electronic and/or optoelectronic device from high impurity content at the substrate-epitaxial interface and reducing the detrimental impact of such interfacial impurity on the performance of the electronic and/or optoelectronic device. The GaN spacer (14) layer has a thickness of at least about 0.5 microns, and preferably from about 0.5 micron to about 2 microns.
(FR) Dispositif électronique et/ou optoélectronique (10) placé sur un substrat autoporteur de GaN (12), une épaisse couche d’entretoise en GaN (14) étant disposée entre le dispositif et le substrat, séparant ainsi la zone active du dispositif électronique et/ou optoélectronique d’une teneur élevée en impuretés de l'interface épitaxiale du substrat et réduisant l’impact néfaste d’une telle impureté interfaciale sur les caractéristiques du dispositif électronique et/ou optoélectronique. La couche d’entretoise en GaN (14) présente une épaisseur d’au moins environ 0,5 micron, et de préférence comprise entre 0,5 micron et 2 microns environ.
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Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)